红外动态场景生成装置空间分辨率的测试

建立了一套基于刀口灰度图红外探测的实验装置,对红外场景生成器的空间分辨率进行了测试。首先通过被测红外场景生成器产生带有刀口标志的红外图像,然后利用红外热像仪采集红外场景生成器所成的红外图像,通过对采集到的红外热图的数据处理,实现了对红外场景生成器空间分辨率的测量。测得的红外场景生成器的空间分辨率为5lp/mm,标准误差为0.04。     

Near-Ultraviolet Circular Dichroism and Two-Dimensional Spectroscopy of Polypeptides

A fully quantitative theory of the relationship between protein conformation and optical spectroscopy would facilitate deeper insights into biophysical and simulation studies of protein dynamics and folding. In contrast to intense bands in the far-ultraviolet, near-UV bands are much weaker and have been challenging to compute theoretically. We report some advances in the accuracy of calculations in the near-UV, which were realised through the consideration of the vibrational structure of the electronic transitions of aromatic side chains.     

识别过渡金属离子的1,8-萘二甲酰亚胺多胺衍生物荧光传感器的研究

设计合成了用以检测过渡金属离子的荧光化学敏感器体系,它们是由1,8-萘二酰亚胺为荧光团,多胺衍生物为金属离子受体组成．在室温下对其光物理性质的研究中发现,在没有加入过渡金属离子时,由于体系内存在有效的光诱导电子转移过程使得荧光团的荧光被淬灭．加入过渡金属离子后,金属离子受体中的氮原子和过渡金属离子之间的配位作用阻断了光诱导电子转移过程,体系的荧光增强．不同的金属离子受体表现出了和过渡金属离子不同的配位识别能力,并且通过荧光的变化传递出受体-金属离子作用的信息．     

量子输运理论与非平衡手征凝聚

讨论量子输运理论以及反常手征凝聚 (DCC)的产生和演化 .建立了手征Nambu Jona Lasinio模型的量子输运方程和约束方程 .发现非平衡的夸克自旋分布是产生DCC的主要物理起因 ,而量子离壳效应可能导致长寿命的DCC .     

Simulation and fabrication of carbon nanotubes field emission pressure sensors

A novel field emission pressure sensor has been achieved utilizing carbon nanotubes (CNTs) as the electron source. The sensor consists of the anode sensing film fabricated by wet etching process and multi-wall carbon nanotubes (MWNTs) cathode in the micro-vacuum chamber. MWNTs on the silicon substrate were grown by thermal CVD. The prototype pressure sensor has a measured sensitivity of about 0.17-0.77 nA/Pa (101-550 KPa). The work shows the potential use of CNTs-based field-emitter in microsensors, such as accelerometers and tactile sensors.     

Microwave‐improved polymerization of ϵ‐caprolactone initiated by carboxylic acids

The ring‐opening polymerization of ε‐caprolactone (ε‐CL), initiated by carboxylic acids such as benzoic acid and chlorinated acetic acids under microwave irradiation, was investigated; with this method, no metal catalyst was necessary. The product was characterized as poly(ε‐caprolactone) (PCL) by ¹H NMR spectroscopy, Fourier transform infrared spectroscopy, ultraviolet spectroscopy, and gel permeation chromatography. The polymerization was significantly improved under microwave irradiation. The weight‐average molecular weight (M_w) of PCL reached 44,800 g/mol, with a polydispersity index [weight‐average molecular weight/number‐average molecular weight (M_w/M_n)] of 1.6, when a mixture of ε‐CL and benzoic acid (25/1 molar ratio) was irradiated at 680 W for 240 min, whereas PCL with M_w = 12,100 and M_w/M_n = 4.2 was obtained from the same mixture by a conventional heating method at 210 °C for 240 min. A degradation of the resultant PCL was observed during microwave polymerization with chlorinated acetic acids as initiators, and this induced a decrease in M_w of PCL. However, the degradation was hindered by benzoic acid at low concentrations. © 2002 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 13–21, 2003     

现代免疫分析技术研究进展

本文着重分析了各种标记免疫分析方法的发展状况，指出更多的非同位素标记物的使用，自动化分析等将是免疫分析法的未来发展趋势。     

核内核子－核子非弹散射截面（Ⅰ）

在与平均场、核内核子－核子弹性散射截面以及输运方程相统一的理论框架内推导了核内核子－核子非弹散射截面的解析表达式．其数值结果能很好地重现自由非弹截面的实验值，所计算的有效非弹截面与Ｄｉｒａｃ－Ｂｒｕｅｃｋｎｅｒ的计算结果相一致．     

有限混合Gamma分布的拓扑稠密性证明

首先给出了有限混合Erlang分布在正实数轴上所有概率分布中稠密的理论证明,进而给出了混合Gamma分布具有稠密性的结论,说明有限混合Gamma分布具有广泛的适用性,可以用来刻画正实数轴上的任意随机变量.     

Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.