Engineering oxide resistive switching materials for memristive device application

Based on a unified physical model and first-principle calculations, a material-oriented methodology has been proposed to control the bipolar switching behavior of an oxide-based resistive random access memory (RRAM) cell. According to the material-oriented methodology, the oxide-based RRAM cell can be designed by material engineering to achieve the required device performance. In this article, a Gd-doped HfO₂ RRAM cell with excellent bipolar switching characteristics is developed to meet the requirements of memristive device application. The typical memristive characteristics of the Gd-doped HfO₂ RRAM cell are presented, and the mechanism is discussed.     

Influence of epitaxial growth on phase competition in Pr0.5Sr0.5MnO3 films

A series of Pr_0.5Sr_0.5MnO₃ (PSMO) films with various thickness were epitaxially grown on substrates of (0 0 1)-oriented (LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7 (LSAT), LaAlO₃ (LAO) and SrTiO₃ (STO), and (0 1 1)-oriented STO using pulse laser deposition. Influence of epitaxial growth on phase competition was investigated. A ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition upon cooling is present in both largely compressed situations deposited on LAO (0 0 1) and tensile cases deposited on STO (0 0 1) but absent in little strained films grown on LSAT (0 0 1), indicating that the antiferromagnetic insulating state is favored by strains. On the other hand, the 400 nm films deposited on (0 1 1)-oriented STO as well as LAO substrates show FMM-AFI transition. These results reveal that both the orientation of epitaxial growth and substrate-induced strain affect the FMM-AFI transition.     

Impacts of compressive strain on phase diagram of epitaxial Pr0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1)

Series Pr_0.5Sr_0.5MnO₃ (PSMO) films of thickness ranging from 20 to 400 nm were epitaxially grown on (0 0 1)-oriented LaAlO₃ using pulsed laser deposition method. The biaxial compressive strain effect on phase transition of the films was systematically investigated by both electrical and magnetic measurements. The 60 nm film shows a ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition at a temperature of ∼190 K. Such a FMM-AFI transition is depressed as the films become thicker, and finally disappears in the strain-relaxed situation. On the other hand, the Curie temperature is remarkably enhanced (∼50 °C) when the film thickness increases from 60 to 400 nm. These results may yield the possibility to modulate the phase transitions by varying the structural strain.