(111)取向(Pb,La)TiO3铁电薄膜中90°纳米带状畴与热释电性能的研究

采用射频磁控溅射技术在Pt/Ti/SiO2/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能,结果表明PLT薄膜为(111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM)分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴,电畴的极化为首尾相接的低能量的排列方式,带状畴的宽度为20-60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数εr为365、介电损耗tgδ为0.02,热释电系数γ为2.18×10-8C·(cm2·K)-1,可以满足制备非制冷红外探测器的需要.     

适用于汽油参比燃料TRF的多环芳香烃生成机理

构造了一个包括287种组分和1569个反应的汽油参比燃料TRF(toluene reference fuel)燃烧过程中多环芳香烃(PAHs)生成机理的详细化学反应动力学模型,引入四种PAH生长路径将多环芳香烃的生成机理发展到芘A4(C20H12)水平,并通过对PAH产率的分析,指出乙炔(C2H2)、丙炔(C3H3)、乙烯基乙炔(C4H4)以及含有奇数碳原子的环戊二烯自由基(C5H5)和茚基(C9H7)等物质对PAHs生成和生长起到重要作用.该机理可以较准确计算基础燃料(PRF)和TRF火焰的着火延迟期、燃烧火焰中小分子(PAH前驱体C2H2、C3H4等)和PAHs的物质浓度.通过与实验数据的比较表明,该机理在不同温度、压力、化学计量比下具有较好的性能.由此分析,该机理对碳烟前驱物PAHs的预测性能是可靠的.     

The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET＇s

The anomalous phenomenon of generation current ICD in the lightly doped drain （LDD） nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated （A） and frozen （F） traps for the VD-step mode： The A traps contributes to ICD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.     

A_1腺苷受体的同源模建及其结构验证

采用同源模建的方法构建了A1腺苷受体的三维结构,并与拮抗剂分子DPCPX对接,将得到的复合物结构进行5 ns的分子动力学模拟,以最后2 ns的平均结构和平衡后抽取的11帧构象共12个蛋白结构为研究对象,用包含52个活性分子和1000个诱饵分子的测试库,分别通过DOCK、VINA和GOLD三种对接软件进行评价,最终得出合理的蛋白质模型.根据top10%的富集因子(EF)和ROC曲线下面积(AU-ROC)的计算结果,我们认为GOLD是最适合A1腺苷受体的对接软件,而12个蛋白质结构中F5和Favg的三维结构模型比较合理,可以作为进一步大规模虚拟筛选的模型.     

温度对ZnO/Al2O3(0001)界面的吸附、扩散及生长初期模式的影响

构建了一个ZnO沉积在α-Al₂O₃(0001)表面生长初期的模型，采用基于密度泛函理论的平面波超软赝势法进行了动力学模拟.发现在400，600和800℃的条件下界面原子有不同的扩散能力，因此温度对ZnO/α-Al₂O₃(0001)表面界面结构以及ZnO薄膜生长初期模式有决定性的影响.在整个ZnO吸附生长过程中，O原子的扩散系数大于Zn原子的扩散系数，O原子的层间扩散对薄膜的均匀生长起着重要作用.进一步从理论计算上证实了ZnO在蓝宝石(0001)上两种生长模式的存在，400℃左右生长模式主要是Zn螺旋扭曲生长，具有Zn六角平面对称特征，且有利于Zn原子位于最外表面.600℃左右呈现为比较规则的层状生长，且有利于O原子位于最外表面.模拟观察到在ZnO薄膜临近Al₂O₃基片表面处，Zn的空位缺陷明显多于O的空位缺陷. 关键词： 扩散 薄膜生长 2O₃(0001)')" href="#">α-Al₂O₃(0001) ZnO     

亚乙基硫脲分子键伸缩模式与全耦合模式键极化率的对比及其拉曼激发虚态的相关研究

从拉曼峰强着手,得到了键伸缩模式与全耦合模式两种不同计算条件下,亚乙基硫脲(ethylene thiourea,ETU)分子的键极化率,并比较分析了两种计算结果的异同.研究表明:在键伸缩模式的算法中,仅考虑势能分布中键对称伸缩比重相对较大的部分拉曼峰参与极化率计算,显然忽略了键伸缩与键弯曲间的相互耦合,造成了与弯曲振动耦合较强的部分键伸缩极化率值存在一定误差.因此,此方法虽能使问题简化,但却丢失了一些信息.而全耦合模式算法考虑了所有振动模式(键伸缩与键弯曲)相互影响的情况,能更全面的反映键电荷的分布情况,但却会使问题的求解过程变得复杂.同时,在拉曼激发虚态的相关研究中,两种计算方法却得到几乎一致的键极化率弛豫方式(呈单指数规律衰减)及相同的衰减特征时间.     

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.     

Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses

Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT)stresses are studied using NMOSFET with 1.4- nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown.