An estimate for the convergence rate of difference schemes for second-order elliptic equations in domains of arbitrary shape

Using the dummy-domains method, a difference scheme is constructed for solving the first boundary-value problem for elliptic equations of the second order in domains of arbitrary shape. An estimate for the convergence rate of order O(h^1/2) in the norm of W ₂ ¹ is found. Bibliography:5 titles. Translated fromObchyslyuval’na ta Prykladna Matematyka, No. 77, 1993, pp. 12–18     

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

Photoluminescence (PL) of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied. The nanostructures were grown by molecular beam epitaxy on GaAs substrates. A strong degree of alloy disorder was found in the material, which led to the broadening of the PL spectra and a considerable Stokes shift that could be traced up to temperature T～230 K. Annealing of the structures improved the ordering and led to the increase in the PL intensity. A remarkable feature of the PL was an unexpectedly small decrease of its intensity with temperature increasing from 84 to 300 K. This effect can be related to localization of carriers at potential fluctuations and to the specific character of Auger-type processes in HgCdTe-based nanostructures.     

The Action of High-Power Pulsed Beams of Nanosecond Duration on Cadmium–Mercury Telluride Semiconductors

Calculations have been performed for the processes occurring in cadmium–mercury tellurides exposed to high-power pulsed beams in the region of high power densities. In particular, the depth distributions of the target temperature and temperature gradients, the quasi-static and dynamic stresses, and the effect of these factors on the redistribution of the interstitial impurity atoms have been calculated.