Physical Properties of Solid Solutions InxAl1–xN

Russian Physics Journal - The phase diagrams and the results of studies of the GaN, AlN and InN ternary solid solutions grown using the magnetron sputtering, molecular beam epitaxy, and...     

Elastic and photoelastic properties of KGd(WO4)2 single crystals

The elastic and photoelastic properties of a potassium-gadolinium tungstate KGd(WO₄)₂ crystal are determined. A complete matrix of elastic constants for the material is obtained for the first time and the velocity diagrams in the five most practically important planes are constructed on its basis. The coefficients of acoustooptic quality M ₂ are measured for the first time for the crystal in the case of isotropic diffraction for all basic configurations of acoustooptic interaction, which makes it possible to reveal the directions of the most effective interaction.     

Features of Radiation Changes in Electrical Properties of InAlN/GaN Hemts

Russian Physics Journal - The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/GaN HEMT structures is analyzed. The features of initial...     

Plasma Etching in InAlN/GaN Hemt Technology

Russian Physics Journal - The experimental data on the plasma etching of Si3N4 for sub-100 nm gate fabrication for high electron mobility transistors (HEMTs) based on InAlN/GaN heterostructures are...