High‐power HgGa2S4 optical parametric oscillator pumped at 1064 nm and operating at 100 Hz

The defect chalcopyrite crystal HgGa₂S₄ has been employed in a 1064‐nm pumped optical parametric oscillator operating at 100 Hz, to generate ∼5 ns long idler pulses near 4 µm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS₂ crystal, operation of the 1064‐nm pumped HgGa₂S₄ OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold.     

Effect of Gallium Arsenide Charge Carrier Life Time on the Generation and Detection Efficiency of Continuous and Pulsed Terahertz Radiation

Russian Physics Journal - A configuration and test samples of photoconductive dipole antennas based on SI-GaAs:Cr and LT-GaAs for generation and detection of terahertz radiation are developed....     

Photoelectrical characteristics of as-grown highresistance GaAs single crystals

The electrophysical and photoelectrical properties of high-resistance GaAs produced by single crystal growth are studied and analyzed. The electron (τ _n ) and hole (τ _p ) lifetimes are estimated. The charge-carrier lifetimes are compared in as-grown and diffusion high-resistance GaAs. The conclusion is made that in high-resistance GaAs produced by chromium diffusion, the charge-carrier recombination mechanism qualitatively differs from that in as-grown GaAs. The charge-carrier recombination in diffusion GaAs is determined by the occurrence of recombination barriers due to chromium diffusion.     

The effect of substrate material on the properties of tantalum oxide films

The effect of substrate material on the electrical characteristics of Ta _x O _y films produced by high-frequency magnetron sputtering of a tantalum oxide target is studied. The effect of oxygen plasma on leakage currents, dielectric permittivity, and dielectric dissipation factor of thin (300–400 nm) Ta _x O _y layers is found. It is proposed to process tantalum oxide films in oxygen plasma to control their electrical and dielectric properties.     

Optical parametric generation in CdSiP2 at 6.125 μm pumped by 8 ns long pulses at 1064 nm

A 21.4 mm long noncritically cut CdSiP2 crystal, pumped by 8 ns pulses at 1064 nm in a double-pass configuration for pump, signal, and idler, generated 523 μJ, 5.8 ns idler pulses at 6.125 μm. The average power of 52.3 mW at the repetition rate of 100 Hz is the highest ever achieved at such wavelengths with direct down conversion from the 1 μm spectral range.     

Gamma-ray detectors based on GaAs<Cr> for nanostructural investigations

The progress in nanotechnologies has been largely due to the advent of a new generation of gamma-ray sources and position detectors, which can ensure both coordinate and temporal measurements within the nanoand femtoranges. The paper offers scientific and engineering solutions related to designing detector materials and structures for detecting single quanta of x- and γ-rays and high-energy charged particles. These are multielement position detectors of a new generation for nanostructure imaging and examination in gamma rays. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 38–52, October, 2008.     

Sub-nanosecond, 1–10?kHz, low-threshold, non-critical OPOs based on periodically poled KTP crystal pumped at 1,064?nm

We employed a 9-mm long periodically poled KTiOPO₄ (PPKTP) crystal in an optical parametric oscillator (OPO) to generate sub-nanosecond idler pulses around 2.8???m. With a 1-cm long OPO cavity in a singly resonant configuration and double pass pumping by 1-ns pulses at 1,064?nm, the maximum idler energy reached 110???J at 1?kHz. Pumping with 500?ps pulses at 1?C10?kHz, resulted in an idler energy of ~50???J and the shortest pulse duration of ~250?ps, ever reported for an OPO. The corresponding quantum conversion efficiencies were 32.5 and 34.9?%, respectively.