排序方式: 共有18条查询结果,搜索用时 15 毫秒
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Aleksey Tyazhev Georgi Marchev Valeriy Badikov Adolfo Esteban‐Martin Dmitrii Badikov Vladimir Panyutin Galina Shevyrdyaeva Svetlana Sheina Anna Fintisova Valentin Petrov 《Laser \u0026amp; Photonics Reviews》2013,7(4):L21-L24
The defect chalcopyrite crystal HgGa2S4 has been employed in a 1064‐nm pumped optical parametric oscillator operating at 100 Hz, to generate ∼5 ns long idler pulses near 4 µm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS2 crystal, operation of the 1064‐nm pumped HgGa2S4 OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold. 相似文献
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Kobtsev D. A. Tyazhev A. V. Kolesnikova I. I. Redkin R. A. 《Russian Physics Journal》2021,63(11):1997-2003
Russian Physics Journal - A configuration and test samples of photoconductive dipole antennas based on SI-GaAs:Cr and LT-GaAs for generation and detection of terahertz radiation are developed.... 相似文献
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D. L. Budnitskii O. B. Koretskaya О. P. Тоlbanov А. V. Tyazhev 《Russian Physics Journal》2010,53(1):44-48
The electrophysical and photoelectrical properties of high-resistance GaAs produced by single crystal growth are studied and
analyzed. The electron (τ
n
) and hole (τ
p
) lifetimes are estimated. The charge-carrier lifetimes are compared in as-grown and diffusion high-resistance GaAs. The conclusion
is made that in high-resistance GaAs produced by chromium diffusion, the charge-carrier recombination mechanism qualitatively
differs from that in as-grown GaAs. The charge-carrier recombination in diffusion GaAs is determined by the occurrence of
recombination barriers due to chromium diffusion. 相似文献
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V. M. Kalygina A. T. Zyryanov V. A. Novikov Yu. S. Petrova M. S. Skakunov O. P. Tolbanov A. V. Tyazhev T. M. Yaskevich 《Russian Physics Journal》2011,53(12):1312-1317
The effect of substrate material on the electrical characteristics of Ta
x
O
y
films produced by high-frequency magnetron sputtering of a tantalum oxide target is studied. The effect of oxygen plasma
on leakage currents, dielectric permittivity, and dielectric dissipation factor of thin (300–400 nm) Ta
x
O
y
layers is found. It is proposed to process tantalum oxide films in oxygen plasma to control their electrical and dielectric
properties. 相似文献
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Marchev G Tyazhev A Petrov V Schunemann PG Zawilski KT Stöppler G Eichhorn M 《Optics letters》2012,37(4):740-742
A 21.4 mm long noncritically cut CdSiP2 crystal, pumped by 8 ns pulses at 1064 nm in a double-pass configuration for pump, signal, and idler, generated 523 μJ, 5.8 ns idler pulses at 6.125 μm. The average power of 52.3 mW at the repetition rate of 100 Hz is the highest ever achieved at such wavelengths with direct down conversion from the 1 μm spectral range. 相似文献
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G. I. Ayzenshtat D. L. Budnitskii D. Yu. Mokeev V. A. Novikov E. M. Syresin O. P. Tolbanov A. V. Tyazhev G. A. Shelkov 《Russian Physics Journal》2008,51(10):1037-1052
The progress in nanotechnologies has been largely due to the advent of a new generation of gamma-ray sources and position
detectors, which can ensure both coordinate and temporal measurements within the nanoand femtoranges. The paper offers scientific
and engineering solutions related to designing detector materials and structures for detecting single quanta of x- and γ-rays
and high-energy charged particles. These are multielement position detectors of a new generation for nanostructure imaging
and examination in gamma rays.
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 38–52, October, 2008. 相似文献
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Georgi Marchev Paolo Dallocchio Federico Pirzio Antonio Agnesi Giancarlo Reali Valentin Petrov Aleksey Tyazhev Valdas Pasiskevicius Nicky Thilmann Fredrik Laurell 《Applied physics. B, Lasers and optics》2012,109(2):211-214
We employed a 9-mm long periodically poled KTiOPO4 (PPKTP) crystal in an optical parametric oscillator (OPO) to generate sub-nanosecond idler pulses around 2.8???m. With a 1-cm long OPO cavity in a singly resonant configuration and double pass pumping by 1-ns pulses at 1,064?nm, the maximum idler energy reached 110???J at 1?kHz. Pumping with 500?ps pulses at 1?C10?kHz, resulted in an idler energy of ~50???J and the shortest pulse duration of ~250?ps, ever reported for an OPO. The corresponding quantum conversion efficiencies were 32.5 and 34.9?%, respectively. 相似文献