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Nussupov K. Kh. Beisenkhanov N. B. Bakranova D. I. Keinbay S. Turakhun A. A. Sultan A. A. 《Physics of the Solid State》2020,62(1):48-53
Physics of the Solid State - The influence of deposition parameters, such as: the magnetron power in the range 690–1400 W, the silicon substrate temperature 23–170°C, the N2 gas... 相似文献
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Nussupov K. Kh. Beisenkhanov N. B. Bakranova D. I. Keinbai S. Turakhun A. A. Sultan A. A. 《Physics of the Solid State》2019,61(12):2473-2479
Physics of the Solid State - Thick SiCx films have been deposited on a c-Si surface by radiofrequency (rf) magnetron sputtering (150 W, 13.56 MHz, Ar flow 2.4 L/h, 0.4 Pa) of graphite and silicon... 相似文献
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