首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   3篇
  免费   0篇
力学   1篇
数学   1篇
物理学   1篇
  2012年   1篇
  2011年   1篇
  2010年   1篇
排序方式: 共有3条查询结果,搜索用时 0 毫秒
1
1.
In this paper, a fuzzy logic controller equipped with training algorithms is developed such that the H ?? tracking performance should be satisfied for a model-free nonlinear fractional order time delay system which is infinite dimensional in nature and time delay is a source of instability. In order to deal with the linguistic uncertainties caused from delay terms, the adaptive time delay fuzzy logic system is constructed to approximate the unknown time delay system functions. By incorporating Lyapunov stability criterion with H ?? tracking design technique, the free parameters of the adaptive fuzzy controller can be tuned on line by output feedback control law and adaptive law. Moreover, the tracking error and external disturbance can be attenuated to arbitrary desired level. The numerical results show the effectiveness of the proposed adaptive H ?? tracking scheme.  相似文献   
2.
In this study, we examined the effect of high-temperature oxidation treatment on the SiGe epitaxial thin films deposited on Si substrates. The X-ray diffraction (XRD), atomic force microscopy (AFM), and nanoindentation techniques were employed to investigate the crystallographic structure, surface roughness, and hardness (H) of the SiGe thin films, respectively. The high-temperature oxidation treatment led to Ge pileup at the surface of the SiGe thin films. In addition, strain relaxation occurred through the propagation of misfit dislocations and could be observed through the cross-hatch pattern (800-900 °C) and SiGe islands (1000 °C) at the surface of the SiGe thin films. Subsequent hardness (H) measurement on the SiGe thin films by continuous penetration depth method indicated that the phenomenon of Ge pileup caused a slightly reduced H (below 50 nm penetration depth), while relaxation-induced defects caused an enhanced H (above 50 nm penetration depth). This reveals the influence of composition and defects on the structure strength of high-temperature oxidation-treated SiGe thin films.  相似文献   
3.
This paper deals with chaos synchronization between two different uncertain fractional order chaotic systems based on adaptive fuzzy sliding mode control (AFSMC). With the definition of fractional derivatives and integrals, a fuzzy Lyapunov synthesis approach is proposed to tune free parameters of the adaptive fuzzy controller on line by output feedback control law and adaptive law. Moreover, chattering phenomena in the control efforts can be reduced. The sliding mode design procedure not only guarantees the stability and robustness of the proposed AFSMC, but also the external disturbance on the synchronization error can be attenuated. The simulation example is included to confirm validity and synchronization performance of the advocated design methodology.  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号