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Thomas M. F. Case G. S. Bland J. Herring A. D. F. Stirling W. G. Tixier S. Boni P. Ward R. C. C. Wells M. R. Langridge S. 《Hyperfine Interactions》2002,141(1-4):471-476
Hyperfine Interactions - Multilayers of Ce/Fe and U/Fe were fabricated by sputtering and studied by X-ray diffraction and reflectivity, Mössbauer spectroscopy and polarised neutron... 相似文献
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Ionic electroactive polymers can be used as sensors or actuators. For this purpose, a thin film of polyelectrolyte is saturated with a solvent and sandwiched between two platinum electrodes. The solvent causes a complete dissociation of the polymer and the release of small cations. The application of an electric field across the thickness results in the bending of the strip and vice versa. The material is modeled by a two-phase continuous medium. The solid phase, constituted by the polymer backbone inlaid with anions, is depicted as a deformable porous media. The liquid phase is composed of the free cations and the solvent (usually water). We used a coarse grain model. The conservation laws of this system have been established in a previous work. The entropy balance law and the thermodynamic relations are first written for each phase and then for the complete material using a statistical average technique and the material derivative concept. One deduces the entropy production. Identifying generalized forces and fluxes provides the constitutive equations of the whole system: the stress–strain relations which satisfy a Kelvin–Voigt model, generalized Fourier’s and Darcy’s laws and the Nernst–Planck equation. 相似文献
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In a previous work [#!ref1!#], the flow velocity of a steady two-dimensional granular flow along an inclined wall was investigated.
The scaling law for the velocity field was found in good agreement with recent experimental results. The purpose of the present
paper is to reformulate in more systematic manner and in a somewhat more general context the equations of mass and momentum
conservation for dense granular flow, and also to present some new results with particular emphasis on roughness influence
and dynamic dilatancy. Theoretical results are found in good agreement with experiments.
Received 19 July 1999 and Received in final form 14 October 1999 相似文献
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Philippe?TordjemanEmail author Pierre-Hubert?Mutin Thomas?Tixier 《Rheologica Acta》2004,43(5):550-558
Five model polydimethylsiloxane (PDMS) networks were obtained by hydrosilation of a difunctional vinyl-terminated PDMS prepolymer with a SiH containing crosslinker. Viscoelastic experiments were performed in order to study the influence of molecular parameters on the dynamic properties at the sol-gel threshold. Critical parameters were determined close to and above the sol-gel threshold. The results obtained suggest that the critical exponents depend on the chemical structure of the incipient networks.This paper was presented at the first Annual European Rheology Conference (AERC) held in Guimarães, Portugal, September 11-13, 2003. 相似文献
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Fluegel B Francoeur S Mascarenhas A Tixier S Young EC Tiedje T 《Physical review letters》2006,97(6):067205
We report a giant bowing of the spin-orbit splitting energy Delta0 in the dilute GaAs1-xBix alloy for Bi concentrations ranging from 0% to 1.8%. This is the first observation of a large relativistic correction to the host electronic band structure induced by just a few percent of isoelectronic doping in a semiconductor material. It opens up the possibility of tailoring the spin-orbit splitting in semiconductors for spintronic applications. 相似文献
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M.J. Seong S. Francoeur S. Yoon A. Mascarenhas S. Tixier M. Adamcyk T. Tiedje 《Superlattices and Microstructures》2005,37(6):394-400
We have studied GaAs1−xBix (up to x3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm−1 and 214 cm−1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at 214 cm−1 is identified as originating from substitutional Bi at the As site in GaAsBi. 相似文献
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