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1.
Abstract— The rapid bimolecular reaction SO + O3= SO2+O2+ 106 kcal/mole
yields electronically excited SO2 in the 3B 1 and 1B2 states with some vibrational excitation, as well as SO2 in its electronic ground state. It is shown that k1 = 1.5 x 1012 exp (-2100/ RT ) cm2 mole-1 s-1 and that the formation of electronically excited SO2 involves higher activation energies.  相似文献   
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Seventeen rotational transitions up to N=7 of the NH2 radical in its ground vibronic state have been measured by far infrared laser magnetic resonance spectroscopy. Analysis of the Zeeman patterns and hyperfine structure yields precise rotational, spin-rotational and distortion parameters, and isotropic and anisotropic hyperfine interaction parameters for both 14N and 1H nuclei.  相似文献   
4.
Because of the increase in the electronic density of states in low-dimensional systems, semiconductor quantum wires constitute a most promising thermoelectric material. We report here the first experimental observation of a very large enhancement of the thermoelectric power of composites containing bismuth nanowires with diameters of 9 and 15 nm, embedded in porous alumina and porous silica. The temperature dependence of the electrical resistance shows that the samples are semiconductors with energy gaps between 0.17 and 0.4 eV, consistent with the theoretical predictions.  相似文献   
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We report a very large enhancement of the thermopower of 4 nm diameter metallic Zn nanowires, with a temperature dependence that is consistent with that of their electrical resistivity and the Mott formula. The temperature dependence of the resistance, magnetoresistance, and thermopower of composites consisting of 15, 9, and 4 nm diameter Zn nanowires imbedded in porous host materials is reported. The 15 nm wires are metallic. The smaller wires show 1D weak localization, but the electrical resistivity mostly follows a T(-1/2) law, and the thermopower of the 4 nm wires saturates at -130 microV/K.  相似文献   
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The PH2 radical in its ground vibrational and electronic state has been detected by far infrared laser magnetic resonance absorption using the 118.6 μm line of the water vapour laser. The spectrum has been assigned to Zeeman components of the 532 – 643 rotational transition.  相似文献   
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The effect of Ca on the adsorption of CO and H2 is investigated. Ca influences the desorption of both species.  相似文献   
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Highly uniform AlGaAs/GaAs and InGaAs(P)/InP epitaxial layers have been grown in a vertical rotating susceptor MOVPE reactor capable of accommodating three 2′ wafers. The unique water-cooled “showerhead”-type injection distributor which is located 1.5 cm above the substrates ensures a uniform reactant distribution, resulting in uniform growth over a wide range of growth conditions. Periodic multilayer and single layer structures have been used to investigate the thickness and compositional uniformities. The thickness variations over a radial distance of 48 mm for three wafers grown in the same run are within ± 2% for both AlGaAs and InGaAs layers, resulting in a standard deviation of only 0.9%. The gallium concentration of an InGaAs layer varies from 46.88% to 47.01% over the same radial distance with the standard deviation of 0.043%. Measurements of InGaAsP layers grown onto 2′ InP wafers with different alloy compositions show good compositional uniformity yielding standard deviations within 4.4 nm in PL wavelength and 135 ppm in lattice mismatch over a 46 mm radial distance.  相似文献   
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