Electrical Resistance and Magnetoresistance of Cd3As2–30 mol % MnAs under High Pressures

Physics of the Solid State - The paper presents the results of a study on the Electrical resistance and magneto-resistance (MR) of the composite, consisting of a Dirac semimetal Cd3As2 and 30 mol %...     

Pressure dependences of electroresistance,magnetoresistance, and the thermoelectromotive force in CuInSe2 and CuInS2

The effects of high pressures on the electrical properties of the polycrystalline CuInSe₂ and CuInS₂ are studied. The resistance, magnetoresistance, thermoelectromotive force, impedance, admittance and loss tangent in high-pressure phases are estimated. The baric ranges of substantial changes in the behavior of all the investigated characteristics are determined.     

Electrical properties of the perovskite-like phase of CaCoCu<Subscript>2</Subscript>V<Subscript>4</Subscript>O<Subscript>12</Subscript> at pressures of up to 50 GPa

The results from experimental investigations on the effect of high pressures (10–50 GPa) on the electrical properties and magnetoresistance of the perovskite-like high-pressure state of CaCoCu₂V₄O₁₂ are presented. The pressure ranges of substantial changes in the behavior of electrical characteristics are determined.     

Magnetic and electrical properties of crystalline materials based on indium and copper chalcogenides in a wide range of temperatures and pressures

The effect of temperatures (2–300 K) and high pressures (to 50 GPa) on the electrical and magnetic properties of crystalline materials based on copper and indium chalcogenides with the general formula (InB)_1?x (CuAB ₂)_x, where A = As, Sb; and B = S, Se, and also crystalline CuInSe₂ and CuInS₂, has been studied.     

Thermoelectric Properties of a Ferromagnetic Semiconductor Based on a Dirac Semimetal (Cd<Subscript>3</Subscript>As<Subscript>2</Subscript>) under High Pressure

The pressure dependences of thermal emf (a parameter that ranks among the most sensitive to phase transformations) are studied for the purpose of identifying baric phase transitions in the 10–50 GPa interval in the Cd₃As₂ + MnAs (44.7% MnAs) structure formed by ferromagnetic MnAs granules in a semiconductor Cd₃As₂ matrix.     

High pressures, low temperatures, and magnetic field effects on AgFeAsSe3 and AgFeSbSe3 properties

A procedure for synthesizing AgFeAsSe₃ and AgFeSbSe₃ is presented, and their electric and magnetic properties are investigated over a wide range of temperatures, pressures, and magnetic field variation. At 100–400K, the samples are characterized by semiconductor properties. Under pressures of ～25 and ～24 GPa, the electric properties of AgFeAsSe₃ and AgFeSbSe₃ change greatly.