Conductance and vibrational states of single-molecule junctions controlled by mechanical stretching and material variation

The changes of molecular conformation, contact geometry, and metal-molecule bonding are revealed by inelastic-electron-tunneling spectroscopy measurements characterizing the molecular vibrational modes and the metal-phonon modes in alkanedithiol molecular junctions at low temperature. Combining inelastic-electron-tunneling spectroscopy with mechanical control and electrode material variation (Au or Pt) enables separating the influence of contact geometry and of molecular conformation. The mechanical strain of different electrode materials can be imposed onto the molecule, opening a new route for controlling the charge transport through individual molecules.     

Facile anionic synthesis of well‐defined block copolymers with pendent triphenylamine and ethynylpyridine for nonvolatile memory device applications with high performances

The sequential block copolymerization of 4,4′‐vinylphenyl‐N,N‐bis(4‐tert‐butylphenyl)benzenamine ( A ) with 2‐(2‐(4‐vinylphenyl)ethynyl)pyridine ( B ) was simply carried out using only potassium naphthalenide (K‐Naph) as an initiator without any additives in tetrahydrofuran (THF) at ?78 °C. The well‐defined functional block copolymers containing A block as an electron donor and B block as a weak electron acceptor had predictable molecular weights (M_n = 8,800–14,500 g/mol) and narrow molecular weight distributions (M_w/M_n = 1.09–1.10). The bicontinuous microphase‐separated film morphology of the precisely synthesized poly( B ‐b‐ A ‐b‐ B ) (P BAB ) with 0.71 of f_{poly( A )}, formed by thermal annealing at 230 °C for 9 h, was expected to be a potential active layer for nonvolatile memory device applications. Indium tin oxide (ITO)/P BAB /aluminum (Al) memory devices with an 8 × 8 cross‐bar array structure exhibited nonvolatile resistive switching characteristics. The memory devices showed reliable memory performance in terms of ON/OFF ratios of ～10⁴, endurance cycles and retention time, and statistical data with regard to cumulative probability of the switching currents and threshold voltage distribution. Filamentary conduction mechanism was proposed to explain the switching of P BAB ‐based memory devices. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 2625‐2632     

Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface.     

Single-molecule devices reveal step-by-step dynamics of hydrogen bonds

正Intermolecular interactions,including hydrogen bonding,hydrophobic interactions,halogen bonding etc.,are ubiquitous in nature,which play key roles in the basic chemical,physical and biochemical process of life.Among them,hydrogen bonds are particularly attractive because they dominate many important structures and functions in nature from elegant base-pair interactions in DNAs to sophisticated protein folding and are regarded as an important element in the discovery of new pharmaceuticals.To better elucidate fundamental mechanisms,many studies have been carried     

Non-volatile memory characteristics of polyimide layers embedded with ZnO nanowires

We fabricated 8 × 8 cross-bar array-type organic non-volatile memory devices of polyimide (PI) layers embedded with ZnO nanowires. The ZnO nanowires were synthesized by chemical vapor deposition and deposited into the PI layers by a solution coating process. The devices of PI layer without ZnO nanowires showed an insulating characteristic without exhibiting any memory behavior. The ZnO nanowires acted as carrier trapping sites in the insulating PI layers for our memory devices. The organic memory devices exhibited write-once-read-many-times-type non-volatile memory characteristics with an excellent ON/OFF switching ratio over 10⁶, good uniformity in cumulative probability, and stability without serious degradation over 10⁴ s.