Oxidation of Zn in UHV environment at low temperature

Thermal oxidation of polycrystalline Zn foils at 5 × 10⁻⁷ Torr oxygen pressure and at room temperature, 50 °C, 70 °C, 90 °C and 110 °C was studied. In situ photoemission spectroscopy using synchrotron light with photon energy of 57 eV was used to monitor the formation of ZnO and to determine the thickness of the oxide overlayer. At the initial oxidation, the oxidation rate follows a two-stage logarithmic equation and later trends to saturate at a certain thickness depending on the oxidation temperature. The saturated thickness was found to increase with the oxidation temperature. The two-stage oxidation process may be governed by two kinds of space charge presumably formed in the thin oxide overlayer.     

In situ monitoring of ZnO formation by photoemission spectroscopy

Exposure of a clean Zn metal to oxygen in ultra high vacuum provides a mean to gradually form ZnO. With in situ synchrotron photoelectron measurement, the progressive change in the spectra with the oxygen exposure time is observed. The analysis of the spectra allows the determination of ZnO formation. It was found that the oxidation process takes place until reaching the critical thickness, at which the oxidation rate reduces greatly to nearly zero. The critical thickness was determined to be about 2 monolayers.