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1.
Pongaglabol [8-hydroxy-5-phenyl-furo[2,3-h]benzo(b)pyran-7-one] was synthesized and tested for antibacterial effects againstShigella dysenteriae, Salmonella typhi, Streptococcus β-haemolyticus andStaphylococcus aureus. The synthesized compounds were characterized using UV, IR and1H NMR spectral data  相似文献   
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Radiation-induced defects are studied in cubic rhodium metal, using the local probe technique ‘Time differential perturbed angular correlation’ (TDPAC) at liquid N2 temperature. Isochronal annealing was done at 300, 1073 and 1473 K temperatures. The irradiated sample showed two quadrupole interaction frequencies at 1150 and 93 MHz. The low frequency disappeared at room-temperature annealing, which was assigned to In trapped at a vacancy, whereas the higher frequency remained up to high temperatures and was attributed to In trapped at Rh–C complexes in the Rh matrix.  相似文献   
4.
2 MeV protons and 1 MeV carbon ions are bombarded on highly oriented pyrolytic graphite (HOPG) samples and their electronic transport measurements are carried out in the presence of magnetic field. The Magneto-Resistance (MR) measurements show measurable hysteresis in the resistance value after ion beam irradiation for the in-plane magnetic field direction as well as for the out-of-plane field direction. The MR depends on the thickness of the flake and the method of its separation from the bulk HOPG. The results substantiate that the ferromagnetic coupling between the magnetic moments at the vacancy defect sites in HOPG sensitively depends on the average defect separation. The average defect separation range of 1.7–0.5 nm allows only a part of the 40 μm thick proton beam irradiated sample to go for ferromagnetic ordering. Similar conclusions are drawn from carbon ion irradiated HOPG flake. The irradiation increases the resistance of the flake as well.  相似文献   
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The presence of a buried, ultra-thin amorphous interlayer in the interface of room temperature deposited Ni film with a crystalline Si(100) substrate has been observed using cross sectional transmission electron microscopy (XTEM). The electron density of the interlayer silicide is found to be 2.02 e/?3 by specular X-ray reflectivity (XRR) measurements. X-ray diffraction (XRD) is used to investigate the growth of deposited Ni film on the buried ultra-thin silicide layer. The Ni film is found to be highly textured in an Ni(111) plane. The enthalpy of formation of the Ni/Si system is calculated using Miedema’s model to explain the role of amorphous interlayer silicide on the growth of textured Ni film. The local temperature of the interlayer silicide is calculated using enthalpy of formation and the average heat capacity of Ni and Si. The local temperature is around 1042 K if the interlayer compound is Ni3Si and the local temperature is 1389 K if the interlayer compound is Ni2Si. The surface mobility of the further deposited Ni atoms is enhanced due to the local temperature rise of the amorphous interlayer and produced highly textured Ni film. Received: 2 March 2000 / Accepted: 28 March 2000 / Published online: 11 May 2000  相似文献   
7.
The band structures of121, 123I nuclei have been studied using a version of the particle-rotor-model in which the experimental excitation energies of the neighbouring (A-1) cores can be fed directly as input parameters. The calculations have been carried out with axially symmetric Nilsson potential with both prolate and oblate deformations. The parameters of the model have been chosen from earlier theoretical work and experimental odd-even mass differences. Only the Coriolis attenuation factor has been treated as adjustable parameter. The theoretical band structures are in very good agreement with the available experimental data.  相似文献   
8.
Optics has already showed its potency over its electronic complements in case of superfast computing and communication systems. Semiconductor optical amplifier, (SOA) with its several nonlinear properties, plays a very crucial role in the development of high-speed all-optical processor. Multiplexer and demultiplexer are the extremely important element of the processor which takes part in utilizing different actions like encoding, decoding, routing, and the different process of data conversion and generation, etc. In this paper, the authors have proposed a scheme of phase encoded all-optical phase multiplexer using four wave mixing (FWM) property of semiconductor optical amplifier. Thus, the improved tolerance against fiber-nonlinearity and higher receiver sensitivity of phase encoding method with the fast occurring processes like FWM in SOA offers higher speed in this proposed scheme of multiplexing.  相似文献   
9.
In this paper the problem of finding the design efficiency is considered when a single observation is unavailable in a connected binary block design. The explicit expression of efficiency is found for the resulting design when the original design is a balanced incomplete block design or a group divisible, singular or semiregular or regular with 1>0, design. The efficiency does not depend on the position of the unavailable observation. For a regular group divisible design with 1>0, the efficiency depends on the position of the unavailable observation. The bounds, both lower and upper, on the efficiency are given in this situation. The efficiencies of designs resulting from a balanced incomplete block design and a group divisible design are in fact high when a single observation is unavailable.The work of the first author is sponsored by the Air Force Office of Scientific Research under Grant AFOSR-90-0092.On leave from Indian Statistical Institute, Calcutta, India. The work of the third author was supported by a grant from the CMDS, Indian Institute of Management, Calcutta.  相似文献   
10.
A study of effective implementation of threshold activation technique for neutron spectral analysis in the environment of an alpha-cyclotron target is presented. The activation data are analysed using LOUHI-82 code. Optimal choices of the regularization parameters of the code are studied and discussed. Energy distribution of neutrons emitted from thick targets of Be, C and Ta irradiated by 40–45 MeV alphas is discussed.  相似文献   
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