Manifestation of disorder effects in the excess tunnel current of heavily doped silicon diodes

The temperature dependence of the forward current in heavily doped silicon p-n diodes has been measured at low temperatures, at which conduction occurs via tunneling. In the lowest temperature region, variable range hopping conduction was observed, whereas at higher temperatures the diode current exhibited a superexponential temperature dependence, which can be explained by thermotunneling through some random potential barriers.     

On the frequency dependence of anomalous attenuation of sounding waves in the case of ionospheric modification by high-power radio emission

The dependence of anomalous attenuation of sounding waves on the frequency f is studied experimentally in the case of ionospheric F-layer modification by high-power radio emission. It is shown that anomalous attenuation increases for |f−f₀| < 20 kHz, f<f₀ (f₀ is the pump-wave frequency) and decreases for f>-f₀ compared with the frequencies that are more distant from f₀. This phenomenon is caused by plasma displacement and formation of a stepped electron-density profile in the region of upper hybrid resonance of the pump wave. Radiophysical Research Institute, Nizhny Novgorod, Russia. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 41, No. 8, pp. 966–977, August, 1998.