Computation of the Reflection Coefficient of a Triangular Semiconductor Prism in a Rectangular Waveguide

In this paper we present a method to solve Maxwell's equations that enables to compute waveguide structure containing a semiconductor triangular prism. The numerical study has showed that the triangular prism in the waveguide has a wider frequency band in comparison with a square rod under equal conditions. The reflection coefficient dependencies on frequency, prism size and its permittivity have been computed. The algorithm and computer programme have been tested and compared with the numerical results and experimental data of the paper [1] with good agreement.     

Specific features of the determination of the mechanical characteristics of thin films by the nanoindentation technique

The hardness and the elastic modulus of Cu thin films on Si, Ti, Cu, and Al substrates are investigated. It is demonstrated that the use of the Oliver-Pharr method in combination with the technique for evaluating the true hardness makes it possible to determine uniquely the hardness of Cu thin films at different ratios between the hardnesses of the film and the substrate. The elastic modulus of thin films can be correctly measured by the Oliver-Pharr method only in the case where the film and the substrate exhibit identical elastic properties. In order to determine the elastic moduli of films with the use of the parameter P/S ², the film and the substrate should have close values of both the hardness and the elastic modulus.     

Plane electromagnetic wave scattering by transversely magnetized ferrite cylinder

The paper is devoted to the problem of scattering of plane electromagnetic wave by transversely magnetized ferrite cylinder. Exact analytical expressions for all partial cylindrical modes are obtained by solving Maxwell’s equations for transversely magnetized ferrite medium in cylindrical coordinate system. They are represented as the power series expansion and then are used to formulate and to solve the boundary problem. Numerical calculations of scattering patterns are also presented. Particular attention is paid to the possibility to control the scattering pattern by the external magnetic field.     

Thermochemical study of gaseous salts of oxygen-containing acids: XXV. Magnesium borates

Standard enthalpies of formation and atomization of gaseous magnesium borates MgBO₂ and MgB₂O₄ were determined.     

Thermodynamic properties of silicate glasses and melts: III. System Rb2O-B2O3-SiO2

The composition of vapor over the system Rb₂O-B₂O₃-SiO₂ and the activities of RbBO in melts of this system at 1000 K were determined. The sign of deviations of the RbBO₂ and Rb₂SiO₃ activities from ideality changes in the melts under study.     

Thermodynamic properties of the gaseous barium silicates BaSiO2 and BaSiO3

In the present study, the stability of gaseous barium silicates was confirmed by the high temperature mass spectrometry. On the basis of equilibrium constants measured for gas-phase reactions, the standard formation enthalpies were determined for gaseous barium silicates as (−510 ± 15) kJ · mol⁻¹ and (−884 ± 18) kJ · mol⁻¹ at 298 K; standard atomization enthalpies as (1637 ± 17) kJ · mol⁻¹ and (2318 ± 20) kJ · mol⁻¹ at 298 K for BaSiO₂ and BaSiO₃, respectively. Based on the results obtained the critical analysis of the literature data was carried out.     

Structure and Properties of Multi-Layer Films of High-Entropy Metals Deposited by the Ion-Plasma Method

Russian Physics Journal - The method for deposition of high entropy alloy (HEA) films is discussed. It consists in the film deposition on a substrate in vacuum from multi-component gas-metal plasma...     

Effect of dopants and interlayers on the growth of thin insulating films

Surface morphologies of thin dielectric films deposited on gallium arsenide substrates are studied by atomic force microscopy (AFM). The quasi-periodic mesostructure with a corrugated configuration is found to form during the deposition process. A special dopant and thin interlayer at the film–substrate interface are used to decrease the surface roughness. The corrugated Si_xN_yO_z–SiO₂ film surface disappears by introducing Se atoms into the subsurface layer of the semiconductor. The root-mean-square roughness and the fractal dimension techniques are used for the numerical characterization of the surface morphologies of thin insulator films.