Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels

The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (～2.5 × 10¹⁸ cm^?3) and to the overlap of the impurity band with the conduction band (～2 × 10¹⁹ cm^?3) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscopy.     

Quasistationary Sedimentation with Adsorption

Models for the sedimentation of particles suspended in solution are proposed that take into account mass transfer between the liquid fraction of the solution and the particles. The structure and velocity of the concentration wave describing the upward extension of the zone with a high concentration of the solid phase are studied using a kinematic model with the Froude number as a small parameter. It is established that the concentration-wave velocity becomes lower if the sorption parameter is set equal to zero, i. e., if the sorption properties of the suspended particles are ignored.__________Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 46, No. 4, pp. 66–77, July–August, 2005.     

Behavior of Viscoplastic Rocks near Fractures: Mathematical Modeling

Doklady Physics - On the basis of the laws of conservation and the principles of thermodynamics, a mathematical model of the flow of a two-phase granular fluid is proposed. One of the phases is the...     

Flow of electrolytes in a porous medium

A two-scale model of ion transfer in a porous medium is obtained for one-dimensional horizontal flows under the action of a pressure gradient and an external electric field by the method of homogenization. Steady equations of electroosmotic flows in flat horizontal nano-sized slits separated by thin dielectric partitions are averaged over a small-scale variable. The resultant macroequations include Poisson’s equation for the vertical component of the electric field and Onsager’s relations between flows and forces. The total horizontal flow rate of the fluid is found to depend linearly on the pressure gradient and external electric field, and the coefficients in this linear relation are calculated with the use of microequations. __________ Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 49, No. 4, pp. 162–173, July–August, 2008.     

Study of Geodesic Acoustic and Alfvén Modes in Toroidal Fusion Devices (Brief Review)

JETP Letters - Geodesic acoustic modes, Alfvén eigenmodes, stationary and oscillating components of the electric field, and their relations to plasma confinement have been studied. Theoretical...     

Boundary Layers for the Navier–Stokes Equations¶of Compressible Fluids

The global unique solvability is proved for the Navier–Stokes equations of compressible fluids for the one-dimensional spiral flows between two circular cylinders. The zero shear viscosity limit μ→ 0 is justified. The value O(μ^α), 0 < α < 1/2, is established for the boundary layer thickness. Received: 11 December 1998 / Accepted: 9 June 1999