Misfit Stress Relaxation in α-Ga2O3/α-Al2O3 Heterostructures via Formation of Misfit Dislocations

Physics of the Solid State - A theoretical model of misfit stress relaxation in film/substrate α-Ga2O3/α-Al2O3 heterostructures with allowance for lattice anisotropy of heterostructure...     

Biplanar Epitaxial AlN/SiC/(n,p)SiC Structures for High-Temperature Functional Electronic Devices

Technical Physics - We investigate the possibility of integration of epitaxial SiC and AlN technologies using opposite faces of the common SiC substrate (AlN epitaxy is performed at the final...     

Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates

Physics of the Solid State - The effect of the inversion of polarity in gallium nitride layers from the N-polar GaN layer to the Ga-polar GaN layer was discovered during the sequential growth of...     

A New Method of Growing AlN,GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates

Physics of the Solid State - The main principles of a new method of growing bulk single-crystal AlN, AlGaN, and GaN films with thickness from 100 μm and more on silicon substrates with a...     

Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films

Physics of the Solid State - Dielectric and polar properties of aluminum nitride (AlN) thin films epitaxially grown on differently oriented silicon substrates with the p-type conduction and a...