Electrical Resistance and Magnetoresistance of Cd3As2–30 mol % MnAs under High Pressures

Physics of the Solid State - The paper presents the results of a study on the Electrical resistance and magneto-resistance (MR) of the composite, consisting of a Dirac semimetal Cd3As2 and 30 mol %...     

Electric and Galvanomagnetic Properties of Cd3As2–20 mol % MnAs Composite under High Pressure

Physics of the Solid State - The pressure dependences of electrical resistance, Hall coefficient, charge carrier mobilities, and magnetoresistance of the Cd3As2–20 mol % MnAs composite are...     

Electrophysical Properties of ZnAs 2 and CdAs 2 at Hydrostatic Pressure up to 9 GPa

Specific electroresistance and Hall coefficient on oriented ZnAs 2 and CdAs 2 single crystals in the region of room temperatures at hydrostatic pressure up to 9 GPa were measured. In p -ZnAs 2 specific electroresistance falls for one order of magnitude with the increase of pressure, and Hall coefficient falls for two orders in magnitude, and at P =7 GPa specific electroresistance and Hall coefficient come out to a saturation. Under mentioned conditions the phase transition in investigated p -ZnAs 2 samples was not observed, in all probability it occurs under the pressure P >10 GPa. Two groups of n -CdAs 2 samples oriented on [1 0 0] and [0 0 1] directions were investigated. The reversible structural phase transition was observed in investigated n -CdAs 2 samples at P =5.5 GPa from the dependencies of specific electroresistance 𝜌 ( P ) and Hall coefficient R H ( P ). On the basis of the values of concentrations and mobilities before and after phase transition a conclusion was made that semiconductor-semiconductor transition takes place in n -CdAs 2 . Maxima that earlier weren't observed, were detected on dependencies 𝜌 ( P ), R H ( P ) at P =1.8 GPa and at P =3 GPa.     

Spin-Polarized Electric Current in Cd48.6Mn11.4As40 Nanocomposite

Physics of the Solid State - For the first time, the temperature dependences of the electrical resistivity and magnetization of the Cd48.6Mn11.4As40 nanocomposite were measured in the temperature...     

Electrical properties of AgSnSbSe<Subscript>3</Subscript> under different external effects

The electrical properties of the chalcogenide AgSnSbSe₃ have been investigated over a wide range of variations in external parameters, such as the temperature, the pressure, and the frequency of the electric field. It has been found that the temperature dependence of the permittivity and the dependence of the electrical resistivity on the hydrostatic pressure exhibit anomalies that are characteristic of structural phase transitions. The influence of the frequency on dielectric properties of the material has been analyzed.