首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   184篇
  免费   1篇
化学   70篇
力学   7篇
数学   30篇
物理学   78篇
  2021年   3篇
  2020年   1篇
  2017年   1篇
  2013年   1篇
  2009年   1篇
  2008年   4篇
  2007年   5篇
  2006年   1篇
  2005年   7篇
  2004年   3篇
  2003年   5篇
  2002年   6篇
  2001年   3篇
  2000年   1篇
  1999年   1篇
  1996年   1篇
  1995年   5篇
  1994年   3篇
  1992年   4篇
  1991年   8篇
  1990年   4篇
  1989年   5篇
  1988年   5篇
  1987年   8篇
  1986年   6篇
  1985年   4篇
  1984年   13篇
  1983年   5篇
  1982年   3篇
  1981年   6篇
  1980年   4篇
  1979年   5篇
  1978年   7篇
  1977年   3篇
  1976年   4篇
  1975年   3篇
  1974年   5篇
  1973年   6篇
  1972年   4篇
  1971年   2篇
  1970年   5篇
  1969年   3篇
  1968年   3篇
  1967年   8篇
排序方式: 共有185条查询结果,搜索用时 15 毫秒
1.
2.
We consider a method of parametrizing the radiative scattering indicatrix. The scattering indicatrix is represented as projections , , on the axes of a Cartesian system of coordinates. Examples are discussed of the experimental determination of these parameters for a model dispersive medium consisting of a solution of polystyrene latex particles in water.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 36–39, October, 1985.  相似文献   
3.
Russian Chemical Bulletin -  相似文献   
4.
The structure of the previously synthesized 1,2-dihydro-3-(2-hydroxyphenyl)-4-nitropyrazol-5(3H)-one (I) was studied by 1H and 13C NMR, IR, and electronic spectra. It was established that the NMR spectra of compound (I) do not contain signals for the H atom at position 4 and the C atoms of the carbonyl groups; in the crystalline state and in solutions the IR spectra do not contain vc=o bands, while the electronic spectra do not contain absorption in the region of 250 nm. On the basis of the foregoing it is concluded that compound (I) exists in the OH form. The distribution of -electron density in the molecule of (I) and the nature of the bands in its electronic absorption spectrum were studied by quantum-chemical methods in the PPP approximation.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 11, pp. 1510–1516, November, 1990.  相似文献   
5.
The reaction of 3-bromothiocoumarin with nitrogen bases, during which the thiocoumarin system is converted to a benzothiophene system, was studied. A new method for the synthesis of amides of benzo[b]thiophene-2-carboxylic acid is proposed.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 10, pp. 1340–1342, October, 1978.  相似文献   
6.
Catalysts of 4.5% Co- 0.1% Rh- 5:10% Cu/TiO 2 display high activity in the synthesis from CO and H2 of a mixture of hydrocarbons and alcohols at 250–300°C and pressures of 0.1–6.0 MPa; these catalysts are more selective than traditional Co catalysts with respect to alcohol formation.Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 8, pp. 1707–1709, August, 1990.  相似文献   
7.
Pristine and WO3 decorated TiO2 nanorods (NRs) were synthesised to investigate n-n-type heterojunction gas sensing properties. TiO2 NRs were fabricated via hydrothermal method on fluorine-doped tin oxide coated glass (FTO) substrates. Then, tungsten was sputtered on the TiO2 NRs and thermally oxidised to obtain WO3 nanoparticles. The heterostructure was characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray (EDX) spectroscopy. Fabricated sensor devices were exposed to VOCs such as toluene, xylene, acetone and ethanol, and humidity at different operation temperatures. Experimental results demonstrated that the heterostructure has better sensor response toward ethanol at 200 °C. Enhanced sensing properties are attributed to the heterojunction formation by decorating TiO2 NRs with WO3.  相似文献   
8.
VINITI. Translated from Funktsional'nyi Analiz i Ego Prilozheniya, Vol. 26, No. 1, pp. 27–34, January–March, 1992.  相似文献   
9.
10.
Radiation defects are shown experimentally to affect differently the normal and anomalous muonium states in silicon. This evidences essentially different mobilities of the two muonium states in the sample lattice.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号