X-ray absorption spectroscopy under high pressures in diamond anvil cells

Abstract

Although potentially extremely important for understanding the high-pressure microscopic behaviour of materials, over the years the area of high-pressure EXAFS in particular using diamond anvil cells has proved to be technically difficult. This has significantly hampered its development. The interference of X-ray dimaction from the diamonds in the diamond anvil cell with the absorption signal has proved to be a challenging problem to tackle, restricting the use of high-pressure EXAFS to energies below about 11 key Below 11 keV however the technique is also limited due to absorption of incident X-rays by the diamonds making it virtually impossible to conduct X-ray absorption experiments below about 9keV In this paper we describe in detail the methodology for scanriirig high-pressure EXAFS in diamond anvil cells and examine the origins of the associated problems and ways of dealing with them. We also demonstrate that it is possible to extend the useful range of studied absorption edges from 7keV up to at least 30keV This brings about new opportunities for high pressure EXAFS using diamond anvil cells.     

Mechanism of the formation of a diamond nanocomposite during transformations of C60 fullerite at high pressure

The results of an investigation of the transformation of C₆₀ fullerite to diamond under pressure through intermediate three-dimensionally polymerized and amorphous phases are reported. It is found that treatment of fullerite C₆₀ at pressures 12–14 GPa and temperatures ∼1400°C produces a nanocrystalline graphite-diamond composite with a concentration of the diamond component exceeding 50%. At lower temperatures (700–1200°C) nanocomposites consisting of diamondlike (sp ³) and graphitic (sp ²) amorphous phases are formed. The nanocomposites obtained have extremely high mechanical characteristics: hardness comparable to that of best diamond single crystals and fracture resistance two times greater than that of diamond. Mechanisms leading to the transformation of C₆₀ fullerite into diamond-based nanocomposites and the reasons for the high mechanical characteristics of these nanocomposites are discussed. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 11, 822–827 (10 June 1999)     

Electrical transport and magnetic ordering in R 2Ti3Ge4 (R=Dy, Ho and Er) compounds

New R ₂Ti₃Ge₄ (R=Dy, Ho and Er) intermetallic compounds have been synthesized and characterized by X-ray diffraction and low temperature ac magnetic susceptibility, electrical resistivity and thermoelectric power measurements were carried out. The compounds crystallize in the parent, Sm₅Ge₄-type orthorhombic structure (space group Pnma) and lanthanide contraction is observed as one moves along the rare-earth series. The changeover from paramagnetic to antiferromagnetic phase happens at low temperatures and the ordering temperature scales with the de Gennes factor. The electrical resistivity is metallic with a negative curvature above 100 K. Thermopower displays a weak maximum at temperatures less than 50 K signifying the possible phonon and magnon drag effects.     

Neuron cells uptake of polymeric microcapsules and subsequent intracellular release

Neuron cells uptake of biodegradable and synthetic polymeric microcapsules functionalized with aggregates of gold nanoparticles incorporated into their shells is demonstrated in situ. In addition to traditionally used optical microscopy, electron microscopy is used both for higher-resolution imaging and for confirming the uptake by focused ion beam cross-sectioning of specific cells in situ. Subsequently, physical methods of release are compared to chemical methods wherein laser-induced intracellular release of dextran molecules into the cytosol of hippocampal neuron cells is studied in comparison to biodegradation. Implications of this work for neuroscience, bio-medicine and single cell studies are discussed.     

Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si

The structure and the electrical and magnetic properties of Mn-implanted Si, which exhibits ferromagnetic ordering at room temperature, are studied. Single-crystal n- and p-type Si wafers with high and low electrical resistivities are implanted by manganese ions to a dose of 5 × 10¹⁶ cm^?2. After implantation and subsequent vacuum annealing at 850°C, the implanted samples are examined by various methods. The Mn impurity that exhibits an electric activity and is incorporated into the Si lattice in interstitial sites is found to account for only a few percent of the total Mn content. The main part of Mn is fixed in Mn₁₅Si₂₆ nanoprecipitates in the Si matrix. The magnetization of implanted Si is found to be independent of the electrical resistivity and the conductivity type of silicon and the type of implanted impurity. The magnetization of implanted Si increases slightly upon short-term postimplantation annealing and disappears completely upon vacuum annealing at 1000°C for 5 h. The Mn impurity in Si is shown to have no significant magnetic moment at room temperature. These results indicate that the room temperature ferromagnetism in Mn-implanted Si is likely to be caused by implantation-induced defects in the silicon lattice rather than by a Mn impurity.     

Pressure-induced crossover between diffusive and displacive mechanisms of phase transitions in single-crystalline alpha-GeO2

We present the first example of the phase transition occurring via the different kinetic mechanisms, displacive or diffusive, competing with each other in quartz-like alpha-GeO2 single crystals. Upon room-pressure heating, alpha-GeO2 transforms to the rutile-type phase (the alpha-->r transition) via the diffusive mechanism. With increase of the treatment pressure the diffusive mode of the temperature-induced alpha-->r transition is substituted at approximately 4 GPa by a displacive-like mode, and then at approximately 6 GPa the transition type changes from the alpha-->r sequence to a displacive martensitic-like transition to a distorted rutile-like phase (alpha-->r'. A crossover between diffusive and displacive transition modes suggests a new way to control the meso- and nanometer-scale morphology of high-pressure phases.     

Raman G‐mode of single‐wall carbon nanotube bundles under pressure

Raman studies of nanotubes under pressure have been a lively area of research. However, the results are not always as expected and at times have not been adequately explained. One example of the diversity of the results is the higher energy Raman mode (the graphitic mode, GM) shift to higher wavenumber under pressure. Here we report a new high‐pressure Raman study showing that the effects of the variation in the tube diameters and the pressure transmitting medium are both crucial for understanding the outcomes of such high‐pressure experiments. Copyright © 2011 John Wiley & Sons, Ltd.     

Elastic properties of the Ta–V system: bcc Ta0.33V0.67 and C15 TaV2

Resonant ultrasound spectroscopy was used to measure the elastic constants of bcc Ta_0.33V_0.67 over the temperature range 3.5–300?K; the results were compared to earlier measurements on C15 TaV₂. The temperature dependence of the polycrystalline shear modulus is completely different in the two phases; that of the bcc phase decreases with temperature whereas that of the C15 phases increases in an anomalous fashion. This difference is consistent with a model involving doubly-degenerate levels at the X point of the Brillouin zone in the C15 phase with the Fermi level lying near the doubly degenerate level. This model accounted for the unusual behaviour of the C15 phase. Debye temperatures were determined from the ultrasonic measurements: 295?K for the C15 phase and 315?K for the bcc phase.