Effects of discharge frequency on plasma characteristics andetching characteristics in high density Cl2 plasma:comparison of ultrahigh-frequency plasma and radio-frequency plasma

We investigated the effects of discharge frequency on the characteristics of polycrystalline-silicon etching rates and on the etching selectivity on the gate oxide (SiO₂). An ultrahigh-frequency (UHF) plasma excited at 500 MHz was found to possess a wider process window for highly selective polycrystalline silicon etching than did an inductively coupled plasma excited at 13.56 MHz. The ionization rate in the UHF plasma is nearly constant at discharge pressures from 3-20 mtorr because the discharge frequency is higher than the electron-collision frequency in that plasma     

Surface and solution properties of polysiloxane–poly(methyl methacrylate) graft copolymer

A polysiloxane–poly(methyl methacrylate) (PMMA) graft copolymer was prepared by hydrosilylation reaction between a Si? H containing polysiloxane and an allyl-terminated PMMA. The obtained graft copolymer was blended with PMMA homopolymer. The addition of only 0.01 wt % of graft copolymer was sufficient to make PMMA surfaces hydrophobic. In acetone–cyclohexane mixed solvent, the graft copolymer formed a polymeric micelle by the aggregation of PMMA branches.     

Measurement of abundance ratio of 15N in amino acids by capillary gas chromatography-mass spectrometry

A capillary gas chromatography-mass spectrometry for analysis of 15N-labeled amino acids and amides is described. The method is based on direct silylation of amino acids and amides with MTBSTFA and the formation of the TBDMS derivatives. The method was possible simultaneously to measure the 15N abundance ratio of amino-N and amide-N of amides, as to analysis of amino acids.