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Combined photoreflectance/photoluminescence measurements are proposed for the study of the stability of semiconductor surface passivation. With such an approach, laser action on both charged and recombination-active electron states can be investigated. The efficiency of the method proposed is demonstrated with GaAs substrates passivated by selenium.  相似文献   
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Based on the equation of a self-consistent field in a fractal cluster, solutions are derived that characterize the laser field amplification as a function of the particle density distribution in the cluster. The influence of the specific features of the particle density distribution in the cluster on the resonance position is established.  相似文献   
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