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R. V. Kuz’menko A. V. Ganzha É. P. Domashevskaya P. V. Ryasnoi 《Technical Physics》2002,47(2):224-226
Combined photoreflectance/photoluminescence measurements are proposed for the study of the stability of semiconductor surface passivation. With such an approach, laser action on both charged and recombination-active electron states can be investigated. The efficiency of the method proposed is demonstrated with GaAs substrates passivated by selenium. 相似文献
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Based on the equation of a self-consistent field in a fractal cluster, solutions are derived that characterize the laser field amplification as a function of the particle density distribution in the cluster. The influence of the specific features of the particle density distribution in the cluster on the resonance position is established. 相似文献
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