THE NON-RADIATIVE DISSIPATION OF EXCITATION ENERGY IN SOLID CINNAMIC ACID BY DIMER FORMATION

Abstract— The quantum efficiency for the photodimerization of trans -cinnamic acid in the solid state is independent of intensity and is found to have a value approaching two. Thus, the reaction involves one excited and one un-excited molecule.
During the exposure, a dimer film developing on the surface of the cinnamic acid layer attenuates the intensity of the radiation incident on the unreacted cinnamic acid. This gives the appearance of a decrease in the quantum yield with increasing number of photons incident.     

Dihydrogen complexes of rhodium: [RhH2(H2)x (PR3)2]+ (R = Cy, iPr; x = 1, 2)

Addition of H2 (4 atm at 298 K) to [Rh(nbd)(PR3)2][BAr(F)4] [R = Cy, iPr] affords Rh(III) dihydride/dihydrogen complexes. For R = Cy, complex 1a results, which has been shown by low-temperature NMR experiments to be the bis-dihydrogen/bis-hydride complex [Rh(H)2(eta2-H2)2(PCy3)2][BAr(F)4]. An X-ray diffraction study on 1a confirmed the {Rh(PCy3)2} core structure, but due to a poor data set, the hydrogen ligands were not located. DFT calculations at the B3LYP/DZVP level support the formulation as a Rh(III) dihydride/dihydrogen complex with cis hydride ligands. For R = iPr, the equivalent species, [Rh(H)2(eta2-H2)2(P iPr3)2][BAr(F)4] 2a, is formed, along with another complex that was spectroscopically identified as the mono-dihydrogen, bis-hydride solvent complex [Rh(H)2(eta2-H2)(CD2Cl2)(P iPr3)2][BAr(F)4] 2b. The analogous complex with PCy3 ligands, [Rh(H)2(eta2-H2)(CD2Cl2)(PCy3)2][BAr(F)4] 1b, can be observed by reducing the H2 pressure to 2 atm (at 298 K). Under vacuum, the dihydrogen ligands are lost in these complexes to form the spectroscopically characterized species, tentatively identified as the bis hydrides [Rh(H)2(L)2(PR3)2][BAr(F)4] (1c R = Cy; 2c R = iPr; L = CD2Cl2 or agostic interaction). Exposure of 1c or 2c to a H2 atmosphere regenerates the dihydrogen/bis-hydride complexes, while adding acetonitrile affords the bis-hydride MeCN adduct complexes [Rh(H)2(NCMe)2(PR3)2][BAr(F)4]. The dihydrogen complexes lose [HPR3][BAr(F)4] at or just above ambient temperature, suggested to be by heterolytic splitting of coordinated H2, to ultimately afford the dicationic cluster compounds of the type [Rh6(PR3)6(mu-H)12][BAr(F)4]2 in moderate yield.     

Chemoselective cyclizations of divinyl ketones to cyclohexenones mediated by Lewis acid and base

[reaction: see text] Chemoselective cyclizations of divinyl ketones to cyclohexenones mediated by a sterically demanding Lewis acid and an amine base have been accomplished under mild reaction conditions. The extension of this methodology to the synthesis of eight-membered rings is also demonstrated.     

2(H)-1,4-Oxazin-2-ones as ambident azadienes

3,5-Dichloro-6-phenyl-2(H)-1,4-oxazin-2-one 3, 5-chloro-3,6-dimethyl-2(H)-1,4-oxazin-2-one 4, 5-chloro-6-methyl-3-phenyl-2(H)-1,4-oxazin-2-one 5 and 5-chloro-3,6-diphenyl-2(H)-1,4-oxazin-2-one 7, are ambident azadienes reacting efficiently and selectively with both electron rich and electron poor dienophiles.     

Low temperature pressure broadening of NH3 by D2

We report experimentally measured cross sections for pressure broadening of ammonia inversion transitions by J=0, ortho-D2 at temperatures of 18-40 K. These measurements were made in a quasiequilibrium cell using the collisional cooling technique. Cross sections for broadening of the metastable (J,K)=(1, 1), (2, 2) and (3, 3) inversion transitions ranged from 67.5 A2 for (1, 1) at 20.0 K to 100.1 A2 for (3, 3) at 25.0 K. The J=0, ortho-D2 cross sections were found to be consistently larger than previously measured cross sections for low temperature broadening of NH3 by both He and H2.     

Combined IR and XPS analysis of the native (1 0 0) surface of single‐crystalline silicon after HFaq etching

A combined analysis, based on angle‐resolved X‐ray photoelectron spectroscopy and multiple‐internal‐reflection infrared spectroscopy, of the (1 0 0) silicon surface after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH₂ and SiH₃ terminations, but contains (in addition to sub‐stoichiometric oxidized silicon) a form of reduced silicon, not consistent with the currently accepted picture of the native HF_aq‐etched surface. Copyright © 2007 John Wiley & Sons, Ltd.