X-ray determination of the mean amplitudes of vibration and debye temperatures of some rare earth monochalcogenides

The x-ray diffraction intensities of Bragg reflections have been measured at room temperature for thulium selenide, samarium sulphide, samarium selenide and samarium telluride. On the basis of a common amplitude approximation, the Debye-Waller factor, the mean amplitude of vibration and the Debye temperature have been evaluated. The values of the Debye temperatures and mean amplitudes of vibration are 176±16°K, 0·185 ± 0·017 Å (TmSe), 155 ± 7°K, 0·244 ± 0·012 Å (SmS), 153 ± 14°K, 0·221 ± 0·020 Å (SmSe) and 151 ± 20°K, 0·204 ± 0·027 Å (SmTe).     

Analysis of coefficient identification problems associated to the inverse Euler-Bernoulli beam theory

A rigorous investigation of the identification of a heterogeneousflexural rigidity coefficient in the Euler-Bernoulli steady-statebeam theory in the presence of a prescribed load is presented.Mathematically, this study is an extension to higher-order differentialequations of the coefficient identification problem analysedby Marcellini (1982) for the one-dimensional Poisson equation.In addition, various types of boundary conditions are discussed.Conditions for the well-posedness of these inverse problemsare established and, furthermore, numerical results obtainedusing a regularization algorithm are presented.     

A critical investigation of the effects of the radio frequency potential on the trapping of externally injected ions in ion trap mass spectrometry

The sensitivity of all ion trap mass spectrometry (ITMS) methods is dependent on the trapping efficiency of the instrument. For ITMS instruments utilizing external ion sources, such as laser desorption, trapping efficiency is known to depend on the phase and amplitude of the radio frequency (RF) potential applied to the ring electrode at the time of ion introduction. It is remarkable that, in a considerable body of literature, no consensus exists regarding the effects of these parameters on the efficacy of trapping externally generated ions. In this paper, a summary of the literature is presented in order to highlight significant discrepancies. New laser desorption ion trap mass spectrometry (LD-ITMS) data are also presented, from which conclusions are drawn in our effort to clarify some of the confusion. Copyright 1999 John Wiley & Sons, Ltd.     

Optical forces and torques in nonuniform beams of light

The spin angular momentum in an elliptically polarized beam of light plays several noteworthy roles in optical traps. It contributes to the linear momentum density in a nonuniform beam, and thus to the radiation pressure exerted on illuminated objects. It can be converted into orbital angular momentum, and thus can exert torques even on optically isotropic objects. Its curl, moreover, contributes to both forces and torques without spin-to-orbit conversion. We demonstrate these effects experimentally by tracking colloidal spheres diffusing in elliptically polarized optical tweezers. Clusters of spheres circulate deterministically about the beam's axis. A single sphere, by contrast, undergoes stochastic Brownian vortex circulation that maps out the optical force field.     

Stress Measurements and Processing Optimization for Solution Derived SrBi2Ta2O9 Thin Films

The development of stress in the SrBi₂Ta₂O₉ (SBT) films generated from a chemical solution deposition method was monitored during processing using wafer curvature measurements. Stress measurements of the entire Si/SiO₂/Pt/SBT stack revealed an overall tensile stress of 536 MPa. The greatest increase in tensile stress was recorded for the anneal of the Pt bottom electrode and was due to the thermal expansion mismatch. Deposition of an amorphous SBT layer on the Pt, followed by a low temperature anneal (300°C), had little overall effect on the stress of the stack; however, upon crystallization, significantly more tensile stress was introduced into the stack. To further investigate the effect that stress has on the various electrical properties SBT films, wafers with different stress states were produced and SBT films deposited on them. Initial investigations indicate that SBT films on wafers with a higher tensile stress displayed improved ferroelectric hysteresis and switchable polarization.