Phonon growth in a many valley model semiconductor at low lattice temperatures

It is shown how the traditional method of neglecting the energy of acoustic phonons and approximating their distribution by the equipartition law leads to significant errors in the phonon growth rate in a many-valley model semiconductor when the lattice temperature is low.     

Periodic and partially periodic representations ofSU(N) q

The Gelfand-Zetlin basis is adapted toSU(N) _q forq a root of unit. Extra parameters are incorporated in the matrix elements of the generators to obtain all the invariants corresponding to the augmented center. A crucial identity is derived and proved, which guarantees the periodicity of the action of the generators. Full periodicity is relaxed by stages, some raising and lowering operators remaining injective while others become nilpotent with corresponding changes in the dimension of the representation. In the extreme case of highest weight representations. all the raising and lowering operators are nilpotent. As an alternative approach an auxiliary algebra giving all the periodic representations is presented. An explicit solution of this system forN=3, while fully equivalent to the G.-Z. basis, turns out to be much simpler.     

Triple differential cross sections for ionization of hydrogen atoms by positrons in a Schwinger variational calculation

Schwinger variational principle has been used to calculate triple differential cross-sections for ionization of hydrogen atoms by positrons at intermediate and high energies for Ehrhardt type asymmetric geometry. The results agree in general with the calculations of Brauneret al [8] and with the second Born calculation.     

Shocks in accretion flows with SPH

Summary We present the preliminary results of a time-dependent simulation, with the Smoothed-Particle Hydrodynamics tecnique, of the accretion of gas onto Schwartzschild black holes. The flow should exibit a stable shock for the parameters chosen. In the case of 1D axisymmetric simulations, we find that the predicted inner shock position is unstable. For 2D axisymmetric simulations, in the light of the first runs, we argue that in this case shocks may be a more common result.     

Evaluation of a carbon-rod atomizer for routine determination of trace metals by atomic-absorption spectroscopy applications to analysis of lubricating oil and crude oil

A carbon-rod atomizer (CRA) fitted with a 'mini-Massmann' carbon rod was evaluated for routine analysis of petroleum and petroleum products for trace metal content by atomic-absorption spectroscopy. Aspects investigated included sensitivity, detection limit, effect of solvent type, and interferences. The results of analysis of oil samples with this technique were compared with those obtained by other techniques. Metals studied were silver, copper, iron, nickel, and lead. Sensitivity and detection limit values obtained with the CRA were similar to those obtained with the carbon-filament atomizer. Strong 'solvent effects' were observed as well as interference by cations. On the basis of this study, design changes for the CRA are suggested, with the object of minimizing 'solvent effects' and interferences, increasing the atomization efficiency, and increasing the residence time of the atomic vapour in the optical path of the instrumental system.     

Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures

Vinyl iodide (C₂H₃I) microwave discharges with additions of H₂ and Ar are found to provide faster etch rates than conventional CH₄/H₂/Ar discharges for InP, InGaAs, GaAs, and AlGaAs. This is a result of the relatively high volatilities of indium, gallium, and aluminum iodide species. The etched features are smooth and anisotropic over a wide range of do self-biases (–150 to –350 V), process pressures (1–20mTorr), and microwave powers (150–500 W). The polymer that forms on the mask during the plasma exposure can be readily removed in O₂ discharges. Electron spectroscopy for chemical analysis (ESCA) showed that the etched surfaces are slightly deficient in the group V elements under most conditions, but changes to the optical properties of the semiconductors are minimal. No defects are visible by transmission electron microscopy (TEM) in GaAs or InP samples etched at dc biases –250 V.     

Enhanced glucose production from cellulose using coimmobilized cellulase and β-glucosidase

β-Glucosidase was covalently immobilized alone and coimmobilized with cellulase using a hydrophilic polyurethane foam (Hypol®FHP 2002). Immobilization improved the functional properties of the enzymes. When immobilized alone, the K_m for cellobiose of β-glucosidase was decreased by 33% and the pH optimum shifted to a slightly more basic value, compared to the free enzyme. Immobilized β-glucosidase was extremely stable (95% of activity remained after 1000 h of continuous use). Coimmobilization of cellulase and β-glucosidase produced a cellulose-hydrolyzing complex with a 2.5-fold greater rate of glucose production for soluble cellulose and a four-fold greater increase for insoluble cellulose, compared to immobilized cellulase alone. The immobilized enzymes showed a broader acceptance of various types of insoluble cellulose substrates than did the free enzymes and showed a long-term (at least 24 h) linear rate of glucose production from microcrystalline cellulose. The pH optimum for the coimmobilized enzymes was 6.0. This method for enzyme immobilization is fast, irreversible, and does not require harsh conditions. The enhanced glucose yields obtained indicate that this method may prove useful for commercial cellulose hydrolysis.