Efficient Collocation Schemes for Singular Boundary Value Problems

We discuss an error estimation procedure for the global error of collocation schemes applied to solve singular boundary value problems with a singularity of the first kind. This a posteriori estimate of the global error was proposed by Stetter in 1978 and is based on the idea of Defect Correction, originally due to Zadunaisky. Here, we present a new, carefully designed modification of this error estimate which not only results in less computational work but also appears to perform satisfactorily for singular problems. We give a full analytical justification for the asymptotical correctness of the error estimate when it is applied to a general nonlinear regular problem. For the singular case, we are presently only able to provide computational evidence for the full convergence order, the related analysis is still work in progress. This global estimate is the basis for a grid selection routine in which the grid is modified with the aim to equidistribute the global error. This procedure yields meshes suitable for an efficient numerical solution. Most importantly, we observe that the grid is refined in a way reflecting only the behavior of the solution and remains unaffected by the unsmooth direction field close to the singular point.     

Compact spreads and compact translation planes over locally compact fields

We prove that a spread S over a locally compact nondlscrete field F defines a topological translation plane if and only if the spread is compact. For F=R, this is implicit in Breuning's thesis [Bre], cf. [B 2]. For the proof, we describe the point set of the projective translation plane as a quotient space of some projective space, with identifications taking place in one hyperplane. This is new even for F=R.     

Chern numbers for two families of noncommutative Hopf fibrations

We consider noncommutative line bundles associated with the Hopf fibrations of SU_q(2) over all Podle? spheres and with a locally trivial Hopf fibration of S³_pq. These bundles are given as finitely generated projective modules associated via 1-dimensional representations of U(1) with Galois-type extensions encoding the principal fibrations of SU_q(2) and S³_pq. We show that the Chern numbers of these modules coincide with the winding numbers of representations defining them. To cite this article: P.M. Hajac et al., C. R. Acad. Sci. Paris, Ser. I 336 (2003).     

Soliton chaos and lengthscale competition in nonlinear dynamics

Perturbing soliton-bearing completely integrable dynamics can give rise to rich and fascinating behaviour. If the perturbation introduces a lengthscale which is large compared to the spatial extent of the solitons present in the system, the solitons move like particles in an effective potential. Taking into account two-soliton interaction can result in chaotic behaviour called ‘soliton chaos’. In the opposite limit of a small-lengthscale perturbation the solitons acquire a dressing which effectively shields them from the perturbation. If the resulting ‘dressed solitons’ are subject to an additional long-wavelength perturbation they move like renormalised particles. Furthermore they can scatter nearly elastically. If the perturbation contains lengthscales which are comparable to one of the soliton's typical lengthscales then lengthscale competition can occur. Neither the particle approximation nor the dressed-particle approximation for the soliton is valid and complicated spatio-temporal behaviour is observed. We illustrate this scenario by means of the perturbed nonlinear Schrödinger equation. The perturbed sine-Gordon equation and the Ablowitz-Ladik equation are also discussed.     

Rhamnosylation of lignans by a Streptomyces strain

Screening of 400 Streptomyces strains for biotransformation of the natural lignan matairesinol led to the identification of Streptomyces sp. LS136, capable of producing a single metabolite in moderate yields. Isolation and purification by preparative HPLC, followed by structural analyses by LC-MS and NMR, established the structure as matairesinol-4-O-rhamnoside. This bacterial strain was also used for rhamnosylation of the abundant natural lignans, hydroxymatairesinol and secoisolariciresinol.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.