Thermal conductivity, dislocation density and GaN device design

The performance of high power transistor devices is intimately connected to the substrate thermal conductivity. In this study, the relationship between thermal conductivity and dislocation density is examined using the 3 omega technique and free standing HVPE GaN substrates. Dislocation density is measured using imaging cathodoluminescence. In a low dislocation density regime below 10⁵ cm⁻², the thermal conductivity appears to plateau out near 230 W/K m and can be altered by the presence of isotopic defects and point defects. For high dislocation densities the thermal conductivity is severely degraded due to phonon scattering from dislocations. These results are applied to the design of homoepitaxially and heteroepitaxially grown HEMT devices and the efficiency of heat extraction and the influence of lateral heat spreading on device performance are compared.     

Ultrafast all-optical modulation on a silicon chip

We experimentally demonstrate ultrafast all-optical modulation using a micrometer-sized silicon photonic integrated device. The device transmission is strongly modulated by photoexcited carriers generated by low-energy pump pulses. A p-i-n junction is integrated on the structure to permit control of the generated carrier lifetimes. When the junction is reverse biased, carriers are extracted from the device in a time as short as 50 ps, permitting greater than 5 Gbit/s modulation of optical signals on a silicon chip.     

Spontaneous emergence of periodic patterns in a biologically inspired simulation of photonic structures

We simulate an evolutionary process in the lab for designing a novel high confinement photonic structure, starting with a set of completely random patterns, with no insight on the initial geometrical pattern. We show a spontaneous emergence of periodical patterns as well as previously unseen high confinement subwavelength bowtie regions. The evolved structure has a Q of 300 and an ultrasmall modal volume of 0.112 (lambda/2n)3. The emergence of the periodic patterns in the structure indicates that periodicity is a principal condition for effective control of the distribution of light.     

Inducing photonic transitions between discrete modes in a silicon optical microcavity

We show the existence of direct photonic transitions between modes of a silicon optical microcavity spaced apart in wavelength by over 8 nm. This is achieved by using ultrafast tuning of the refractive index of the cavity over a time interval that is comparable to the inverse of the frequency separation of modes. The demonstrated frequency mixing effect, i.e., the transitions between the modes, would enable on-chip silicon comb sources which can find wide applications in optical sensing, precise spectroscopy, and wavelength-division multiplexing for optical communications and interconnects.     

10 Gb/s broadband silicon electro-optic absorption modulator

Here we propose a design for a novel broadband silicon electro-optic absorption modulator. The device is simply a 100 µm long silicon waveguide with a Schottky diode integrated in it. Modulation is achieved through free-carrier absorption, not interference effects, enabling operation over the entire bandwidth of the waveguide. The high overlap between the modulated carrier density and the optical mode enables high speed (> 10 Gb/s), small footprint and modulation depths of ∼ 4.6 dB.     

Non-minimal and non-universal supersymmetry

I motivate and discuss non-minimal and non-universal models of supersymmetry and supergravity consistent with string unification at 10¹⁰ GeV.     

Sustained kilowatt lasing in a free-electron laser with same-cell energy recovery

Jefferson Laboratory's kW-level infrared free-electron laser utilizes a superconducting accelerator that recovers about 75% of the electron-beam power. In achieving first lasing, the accelerator operated "straight ahead" to deliver 38-MeV, 1.1-mA cw current for lasing near 5 &mgr;m. The waste beam was sent directly to a dump while producing stable operation at up to 311 W. Utilizing the recirculation loop to send the electron beam back to the linac for energy recovery, the machine has now recovered cw average currents up to 5 mA, and has lased cw with up to 1720 W output at 3.1 &mgr;m.