Electrical Resistance and Magnetoresistance of Cd3As2–30 mol % MnAs under High Pressures

Physics of the Solid State - The paper presents the results of a study on the Electrical resistance and magneto-resistance (MR) of the composite, consisting of a Dirac semimetal Cd3As2 and 30 mol %...     

The Synthesis and Investigation of the Electrical Properties of Tricadmium Diarsenide with MnAs Nanogranules

Technical Physics - Samples of tricadmium diarsenide with MnAs nanogranules (44.7 mol % MnAs) are synthesized. The morphology of the samples is studied by X-ray phase analysis and electron...     

Electron Relaxation Time in InAs

Russian Physics Journal -     

Electron scattering with spin flip in indium antimonide and indium arsenide

The longitudinal magnetoresistance has been investigated at temperatures in the range from 2.8 to 200 K in a magnetic field of up to 200 kOe with the aim of determining the temperature range and the magnetic field strength at which charge carrier scattering with spin flip occurs in n-type indium arsenide and n-type indium antimonide. It is established that quantum oscillations of the longitudinal magnetoresistance of indium arsenide exhibit weak zero maxima due to electron scattering with spin flip at temperatures in the range from 4 to 35 K in a magnetic field of 146 kOe. For the longitudinal magnetoresistance of indium antimonide, zero maxima caused by electron scattering with spin flip are revealed in the temperature range from 60 to 80 K in a magnetic field of 132 kOe.     

Spin-Polarized Electric Current in Cd48.6Mn11.4As40 Nanocomposite

Physics of the Solid State - For the first time, the temperature dependences of the electrical resistivity and magnetization of the Cd48.6Mn11.4As40 nanocomposite were measured in the temperature...