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1.
Aleksey Tyazhev Georgi Marchev Valeriy Badikov Adolfo Esteban‐Martin Dmitrii Badikov Vladimir Panyutin Galina Shevyrdyaeva Svetlana Sheina Anna Fintisova Valentin Petrov 《Laser \u0026amp; Photonics Reviews》2013,7(4):L21-L24
The defect chalcopyrite crystal HgGa2S4 has been employed in a 1064‐nm pumped optical parametric oscillator operating at 100 Hz, to generate ∼5 ns long idler pulses near 4 µm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS2 crystal, operation of the 1064‐nm pumped HgGa2S4 OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold. 相似文献
2.
Erbium fiber laser-pumped continuous-wave microchip Cr(2+):ZnS and Cr(2+):ZnSe lasers 总被引:2,自引:0,他引:2
Efficient continuous-wave (cw) lasing of Cr(2+):ZnS and Cr(2+):ZnSe crystals in external hemispherical cavities and in a microchip configuration under Er-fiber-laser pumping at room temperature are reported. The key result is what is believed to be the first successful demonstration of cw Cr(2+):ZnS and Cr(2+):ZnSe microchip lasers with maximum output powers of 63 and 100 mW at 2320 and 2520 nm, with slope efficiencies of 53% and 20%, respectively. 相似文献
3.
Broadly tunable compact continuous-wave Cr(2+):ZnS laser 总被引:2,自引:0,他引:2
Sorokina IT Sorokin E Mirov S Fedorov V Badikov V Panyutin V Schaffers KI 《Optics letters》2002,27(12):1040-1042
We report the development of a continuous-wave, room-temperature Cr(2+) ZnS laser that is compact and tunable over 700 nm. The laser is pumped by a diode-pumped Er-fiber laser and generates 0.7 W of linearly polarized radiation at 2.35microm , at up to 40% slope efficiency. Cr(2+) ZnS directly diode-pumped at 1.6microm yields polarized radiation that is tunable over 400 nm at up to 25 mW of output power. A comparison of Cr(2+) ZnS with Cr ZnSe (70 mW, 350 nm) in a similar setup is given. As opposed to Cr ZnSe, the Cr ZnS laser is intrinsically polarized. Finally, we observe sensitization of the output radiation by a few milliwatts of the visible (470-500-nm) and near-infrared (740-770-nm) radiation. 相似文献
4.
Continuous-wave tunable Cr2+:ZnS laser 总被引:1,自引:0,他引:1
I.T. Sorokina E. Sorokin S. Mirov V. Fedorov V. Badikov V. Panyutin A. Di Lieto M. Tonelli 《Applied physics. B, Lasers and optics》2002,74(6):607-611
We report the first continuous-wave tunable over ∼280 nm around 2.3 μm room-temperature operation of a chemical vapor transport-grown
and diffusion-doped Cr2+:ZnS laser, pumped by a Co:MgF2 laser at 1.67 μm and generating over 100 mW of output power at 16% slope efficiency. The self-consistent results of the laser
and spectroscopic analysis demonstrate a large potential of this crystal as an active medium for diode-pumped tunable mid-infrared
sources.
Received: 7 January 2002 / Revised: 14 March 2002 / Published online: 2 May 2002 相似文献
5.
Petrov V. Panyutin V. L. Tyazhev A. Marchev G. Zagumennyi A. I. Rotermund F. Noack F. Miyata K. Iskhakova L. D. Zerrouk A. F. 《Laser Physics》2011,21(4):774-781
We present measurements of the transparency, refractive index dispersion, nonlinear coefficient, damage threshold, and two-photon
absorption of mixed GaS
x
Se1 − x
crystals and show that GaS0.4Se0.6 is a promising nonlinear material for down conversion of pulsed 1064 nm radiation to the mid-IR above 5 μm without significant
two-photon absorption. 相似文献
6.
Adolfo Esteban‐Martin Georgi Marchev Valeriy Badikov Vladimir Panyutin Valentin Petrov Galina Shevyrdyaeva Dmitrii Badikov Marina Starikova Svetlana Sheina Anna Fintisova Aleksey Tyazhev 《Laser \u0026amp; Photonics Reviews》2013,7(6):L89-L92
The defect chalcopyrite crystal HgGa2S4 has been employed in a 1064‐nm pumped optical parametric oscillator to generate <7 ns long idler pulses near 6.3 μm with energies as high as 3 mJ, tunable in a broad spectral range from 4.5 to 9 μm. 相似文献
7.
Valeriy Badikov Dmitrii Badikov Galina Shevyrdyaeva Aleksey Tyazhev Georgi Marchev Vladimir Panyutin Valentin Petrov Albert Kwasniewski 《固体物理学:研究快报》2011,5(1):31-33
Biaxial BaGa4S7 and BaGa4Se7 crystals transparent in the mid‐IR have been grown by the Bridgman–Stockbarger technique in sufficiently large sizes and with good optical quality to measure the refractive indices and analyze phase‐matching properties. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
8.
Panyutin E. A. Sharofidinov Sh. Sh. Orlova T. A. Snytkina S. A. Lebedev A. A. 《Technical Physics》2020,65(3):428-433
Technical Physics - We investigate the possibility of integration of epitaxial SiC and AlN technologies using opposite faces of the common SiC substrate (AlN epitaxy is performed at the final... 相似文献
9.
G. M. Kuz’micheva V. B. Rybakov V. L. Panyutin E. V. Zharikov K. A. Subbotin 《Russian Journal of Inorganic Chemistry》2010,55(9):1448-1453
Kinetic order-disorder phase transitions (space group space group $
I\bar 4
$
I\bar 4
↔ space group I41/a) have been considered for nonactivated and activated scheelite compounds (Na0.5Gd0.5)WO4 (NGW), (Na0.5Gd0.5)MoO4 (NGM), (Na0.5La0.5)WO4(NLW), and (Na0.5La0.5)MoO4 (NLM) synthesized by the Czochralski method and structural and growth sources of crystal dissymmetrization have been suggested.
For NGW, it was shown that an increase in the difference between the content of Gd and Na in two positions of the structure
with space group $
I\bar 4
$
I\bar 4
and their ratio leads to an increase in the deviation from centrosymmetry. On the basis of available literature data and
our results, it was demonstrated that the degree of order depends on the initial composition of the reaction mixture, crystal
growth and cooling rates, activator concentrations, and postgrowth treatment conditions. The inconsistency between X-ray diffraction
data and asynchronous second harmonic generation studies was explained by the possibility of formation of centrosymmetric
superstructures and/or local ordering of atoms. 相似文献
10.
V. L. Panyutin B. É. Ponedel'nikov A. É. Rozenson V. I. Chizhikov 《Russian Physics Journal》1979,22(8):857-862
The energy band structure of a number of AIIBIIICVI semiconductors with highly symmetric Brillouin zone points , T, P, N is analyzed by the method of a pseudopotential. It is established that the vertex of the valence band and the bottom of the conduction band are at the point . The values obtained for the forbidden bound width are in satisfactory agreement with experimental results.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 57–64, August, 1979.In conclusion, we are grateful to V. V. Badikov for support of the research and stimulating discussions, and also to A. M. Ratner and V. A. Chaldyshev for fruitful consultations. 相似文献