High‐power HgGa2S4 optical parametric oscillator pumped at 1064 nm and operating at 100 Hz

The defect chalcopyrite crystal HgGa₂S₄ has been employed in a 1064‐nm pumped optical parametric oscillator operating at 100 Hz, to generate ∼5 ns long idler pulses near 4 µm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS₂ crystal, operation of the 1064‐nm pumped HgGa₂S₄ OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold.     

Erbium fiber laser-pumped continuous-wave microchip Cr(2+):ZnS and Cr(2+):ZnSe lasers

Efficient continuous-wave (cw) lasing of Cr(2+):ZnS and Cr(2+):ZnSe crystals in external hemispherical cavities and in a microchip configuration under Er-fiber-laser pumping at room temperature are reported. The key result is what is believed to be the first successful demonstration of cw Cr(2+):ZnS and Cr(2+):ZnSe microchip lasers with maximum output powers of 63 and 100 mW at 2320 and 2520 nm, with slope efficiencies of 53% and 20%, respectively.     

Broadly tunable compact continuous-wave Cr(2+):ZnS laser

We report the development of a continuous-wave, room-temperature Cr(2+) ZnS laser that is compact and tunable over 700 nm. The laser is pumped by a diode-pumped Er-fiber laser and generates 0.7 W of linearly polarized radiation at 2.35microm , at up to 40% slope efficiency. Cr(2+) ZnS directly diode-pumped at 1.6microm yields polarized radiation that is tunable over 400 nm at up to 25 mW of output power. A comparison of Cr(2+) ZnS with Cr ZnSe (70 mW, 350 nm) in a similar setup is given. As opposed to Cr ZnSe, the Cr ZnS laser is intrinsically polarized. Finally, we observe sensitization of the output radiation by a few milliwatts of the visible (470-500-nm) and near-infrared (740-770-nm) radiation.     

Continuous-wave tunable Cr2+:ZnS laser

We report the first continuous-wave tunable over ∼280 nm around 2.3 μm room-temperature operation of a chemical vapor transport-grown and diffusion-doped Cr²⁺:ZnS laser, pumped by a Co:MgF₂ laser at 1.67 μm and generating over 100 mW of output power at 16% slope efficiency. The self-consistent results of the laser and spectroscopic analysis demonstrate a large potential of this crystal as an active medium for diode-pumped tunable mid-infrared sources. Received: 7 January 2002 / Revised: 14 March 2002 / Published online: 2 May 2002     

GaS0.4Se0.6: Relevant properties and potential for 1064 nm pumped mid-IR OPOs and OPGs operating above 5 μm

We present measurements of the transparency, refractive index dispersion, nonlinear coefficient, damage threshold, and two-photon absorption of mixed GaS _x Se_{1 − x} crystals and show that GaS_0.4Se_0.6 is a promising nonlinear material for down conversion of pulsed 1064 nm radiation to the mid-IR above 5 μm without significant two-photon absorption.     

High‐energy optical parametric oscillator for the 6 μm spectral range based on HgGa2S4 pumped at 1064 nm

The defect chalcopyrite crystal HgGa₂S₄ has been employed in a 1064‐nm pumped optical parametric oscillator to generate <7 ns long idler pulses near 6.3 μm with energies as high as 3 mJ, tunable in a broad spectral range from 4.5 to 9 μm.     

Phase‐matching properties of BaGa4S7 and BaGa4Se7: Wide‐bandgap nonlinear crystals for the mid‐infrared

Biaxial BaGa₄S₇ and BaGa₄Se₇ crystals transparent in the mid‐IR have been grown by the Bridgman–Stockbarger technique in sufficiently large sizes and with good optical quality to measure the refractive indices and analyze phase‐matching properties. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Biplanar Epitaxial AlN/SiC/(n,p)SiC Structures for High-Temperature Functional Electronic Devices

Technical Physics - We investigate the possibility of integration of epitaxial SiC and AlN technologies using opposite faces of the common SiC substrate (AlN epitaxy is performed at the final...     

Symmetry of (Na<Subscript>0.5</Subscript>R<Subscript>0.5</Subscript>)MO<Subscript>4</Subscript> crystals (R = Gd,La; M = W,Mo)

Kinetic order-disorder phase transitions (space group space group $ I\bar 4 $ I\bar 4 ↔ space group I4₁/a) have been considered for nonactivated and activated scheelite compounds (Na_0.5Gd_0.5)WO₄ (NGW), (Na_0.5Gd_0.5)MoO₄ (NGM), (Na_0.5La_0.5)WO₄(NLW), and (Na_0.5La_0.5)MoO₄ (NLM) synthesized by the Czochralski method and structural and growth sources of crystal dissymmetrization have been suggested. For NGW, it was shown that an increase in the difference between the content of Gd and Na in two positions of the structure with space group $ I\bar 4 $ I\bar 4 and their ratio leads to an increase in the deviation from centrosymmetry. On the basis of available literature data and our results, it was demonstrated that the degree of order depends on the initial composition of the reaction mixture, crystal growth and cooling rates, activator concentrations, and postgrowth treatment conditions. The inconsistency between X-ray diffraction data and asynchronous second harmonic generation studies was explained by the possibility of formation of centrosymmetric superstructures and/or local ordering of atoms.     

Band structure of semiconductors with cadmium thiogallate lattice

The energy band structure of a number of A^IIB^IIIC^VI semiconductors with highly symmetric Brillouin zone points , T, P, N is analyzed by the method of a pseudopotential. It is established that the vertex of the valence band and the bottom of the conduction band are at the point . The values obtained for the forbidden bound width are in satisfactory agreement with experimental results.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 57–64, August, 1979.In conclusion, we are grateful to V. V. Badikov for support of the research and stimulating discussions, and also to A. M. Ratner and V. A. Chaldyshev for fruitful consultations.