排序方式: 共有4条查询结果,搜索用时 15 毫秒
1
1.
Nussupov K. Kh. Beisenkhanov N. B. Bakranova D. I. Keinbay S. Turakhun A. A. Sultan A. A. 《Physics of the Solid State》2020,62(1):48-53
Physics of the Solid State - The influence of deposition parameters, such as: the magnetron power in the range 690–1400 W, the silicon substrate temperature 23–170°C, the N2 gas... 相似文献
2.
Kukushkin S. A. Nussupov K. Kh. Osipov A. V. Beisenkhanov N. B. Bakranova D. I. 《Physics of the Solid State》2017,59(5):1014-1026
Physics of the Solid State - The structure and composition of SiC nanolayers are comprehensively studied by X-ray reflectometry, IR-spectroscopy, and atomic-force microscopy (AFM) methods for the... 相似文献
3.
Nussupov K. Kh. Beisenkhanov N. B. Bakranova D. I. Keinbai S. Turakhun A. A. Sultan A. A. 《Physics of the Solid State》2019,61(12):2473-2479
Physics of the Solid State - Thick SiCx films have been deposited on a c-Si surface by radiofrequency (rf) magnetron sputtering (150 W, 13.56 MHz, Ar flow 2.4 L/h, 0.4 Pa) of graphite and silicon... 相似文献
4.
K. Kh. Nussupov N. B. Beisenkhanov S. K. Zharikov I. K. Beisembetov B. K. Kenzhaliev T. K. Akhmetov B. Zh. Seitov 《Physics of the Solid State》2014,56(11):2307-2321
The mathematical decomposition of the IR absorption spectrum obtained from a Si layer after the C+ ion implantation with an energy of 10 or 40 keV or from a homogeneous SiC0.7 film has demonstrated that fractions of weak elongated Si-C bonds in the amorphous phase, strong shortened Si-C bonds on the surface of small nanocrystals, and tetrahedral Si-C bonds in the crystalline phase (degree of crystallinity) after high-temperature annealing (1250–1400°C) of the layers are equal to 29/29/42, 22/7/71, and 21/31/48%, respectively. A system of SiC2.0, SiO2, SiC0.8, and SiC0.6 layers in the film on the Si substrate has been identified using X-ray reflectometry and the simulation with the Release software. The reflectometry data on fluctuations of the intensity of X-ray reflections in the region of the main maximum have been interpreted in terms of variations in the density over the depth of the layer with a Gaussian distribution of carbon atoms from 2.55 and 2.90 g/cm3 for the SiC0.25 and SiC0.65 layers, respectively, to 3.29 g/cm3 for the SiC1.36 layer. 相似文献
1