Near field imaging in microwave regime using double layer split-ring resonator based metamaterial

A planar metamaterial structure consisting of two layers of split-ring resonator (SRR) arrays is demonstrated to form the image of a point source with subwavelength resolution. The source frequency is swept through the resonance gap of the metamaterial layers and the lateral field intensity distribution is recorded on the transmission side of the metamaterial. When the source is tuned to the resonance frequency of SRRs, the metamaterial acts as a high permeability medium and a distinct image with subwavelength resolution in the lateral direction is obtained. Increasing the distance between the individual SRR layers reduces the interlayer coupling, and the intensity and spatial resolution of the image decrease rapidly.     

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 × 10⁸ cm⁻² for Sample B with a lattice-matched In_0.17Al_0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).     

Building an Iron Chromophore Incorporating Prussian Blue Analogue for Photoelectrochemical Water Oxidation

The replacement of traditional ruthenium-based photosensitizers with low-cost and abundant iron analogs is a key step for the advancement of scalable and sustainable dye-sensitized water splitting cells. In this proof-of-concept study, a pyridinium ligand coordinated pentacyanoferrate(II) chromophore is used to construct a cyanide-based CoFe extended bulk framework, in which the iron photosensitizer units are connected to cobalt water oxidation catalytic sites through cyanide linkers. The iron-sensitized photoanode exhibits exceptional stability for at least 5 h at pH 7 and features its photosensitizing ability with an incident photon-to-current conversion capacity up to 500 nm with nanosecond scale excited state lifetime. Ultrafast transient absorption and computational studies reveal that iron and cobalt sites mutually support each other for charge separation via short bridging cyanide groups and for injection to the semiconductor in our proof-of-concept photoelectrochemical device. The reorganization of the excited states due to the mixing of electronic states of metal-based orbitals subsequently tailor the electron transfer cascade during the photoelectrochemical process. This breakthrough in chromophore-catalyst assemblies will spark interest in dye-sensitization with robust bulk systems for photoconversion applications.     

Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry–Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation. Received: 8 March 2001 / Accepted: 17 March 2001 / Published online: 23 May 2001     

Optically implemented broadband blueshift switch in the terahertz regime

We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.     

Study of the field emitted by a source placed inside a two-dimensional left-handed metamaterial

We studied the properties of electromagnetic waves that were emitted from a source placed inside a left-handed medium based on a two-dimensional labyrinth. While the arguments of geometrical optics suggest that the field emitted from the source would be focused outside the left-handed medium no matter where the source was placed, our results proved the contrary. We found that the field emitted from the source was focused outside the left-handed medium when the source was placed inside the medium at a certain distance away from the interface. Moreover, our results showed that the field emitted from the source was focused on the subwavelength dimensions outside the left-handed medium.     

Reflection properties of metallic photonic crystals

Received: 10 November 1997/Accepted: 16 November 1997     

The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14)

Al_0.31Ga_0.69N/AlN/GaN/In_xGa_1?xN/GaN heterostructures grown with the metal-organic chemical vapor deposition (MOCVD) technique with different In_xGa_1?xN back-barriers with In mole fractions of 0.05 ≤ x ≤ 0.14 were investigated by using XRD measurements. Screw, edge, and total dislocations, In mole fraction of back-barriers, Al mole fraction, and the thicknesses of front-barriers and lattice parameters were calculated. Mixed state dislocations with both edge and screw type dislocations were observed. The effects of the In mole fraction difference in the back-barrier and the effect of the thickness of front-barrier on crystal quality are discussed. With the increasing In mole fraction, an increasing dislocation trend is observed that may be due to the growth temperature difference between ultrathin In_xGa_1?xN back-barrier and the surrounding layers.     

A Facile Strategy for Construction of Sensor for Detection of Ondansetron and Investigation of its Redox Behavior and Thermodynamic Parameters

A sodium dodecylsulfate‐doped polypyrrole (SDS‐PPy) film was elaborated on glassy carbon electrode (GCE) by an electrodeposition method in phosphate buffer solution (pH 2.0) containing pyrrole (Py) and sodium dodecyl sulfate (SDS). SDS‐PPy/GCE was used for the construction of sensor, which showed excellent electrochemical response for the detection of ondansetron (OND) compared to conventional PPy. The application of the square wave (SW), with the adsorptive accumulation, indicates a maximum response at 1.33 V in H₂SO₄ (0.5 M). The influence of experimental parameters on determination of OND is discussed. The adsorptive stripping technique showed to be more sensitive, giving responses twice as big as those of non‐accumulated OND. The substantial improvement of response permits the development of an electroanalytical technique with a linear concentration in the range (1.0–80 μM), low detection (0.09 μM), and quantification limits (0.3 μM), and acceptable relative standard deviations of repeatability (0.59 %), and reproducibility (1.51 %). Consequently, this electrode is promising candidate for an accurate electroanalytical determination of OND in pharmaceutical samples with high sensitivity and selectivity, good accuracy and precision. The electrooxidation of OND at SDS‐PPy/GCE at various temperatures were studied by cyclic voltammetry to evaluate both the kinetic (k_s and E_a) and thermodynamic (ΔG*, ΔH* and ΔS*) parameters.