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The chemical and the phase compositions of multilayer nanoperiodic SiO x /ZrO2 structures prepared by vacuum evaporation from separated sources and subjected to high-temperature annealing have been studied by X-ray photoelectron spectroscopy with a layer-by-layer etching. It is found that, under deposition conditions used, the silicon suboxide layers had the stoichiometric coefficient x ~1.8 and the zirconium-containing layers were the stoichiometric zirconium dioxide. It was found, using X-ray photoelectron spectroscopy, that annealing of the multilayer structures at 1000°C leads to mutual diffusion of the components and chemical interaction between ZrO2 and SiO x with predominant formation of zirconium silicate at heteroboundaries of the structures. The SiO x layers of the annealed nanostructures contained ~5 at % elemental silicon as a result of the phase separation and the formation of fine silicon nanocrystals.  相似文献   
2.
The results of integrated studies of thin-film structures based on silicon and hafnium dioxides on silicon grown by electron-beam evaporation in vacuum are presented. The surface morphology, structural and phase composition of these films depending on the annealing temperature within 500–1100°C are studied. Special consideration is given to the change in the state of the interfaces after annealing. It is determined that annealing in a flow of nitrogen with the addition of oxygen (~10 vol %) at 700°C does not lead to structural and phase changes in the films, but the intensity of the electron paramagnetic resonance (EPR) spectra of uncompensated bonds on the HfO2-Si interface decreased. Annealing at higher temperatures stimulates crystallization of the HfO2 films and hafnium silicate is formed on the SiO2-HfO2 interface and suboxide SiO x appears on the HfO2-Si interface.  相似文献   
3.
Thin (~60 nm) germanium layers supersaturated with a manganese impurity of 10–16 at % have been studied by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The layers have been fabricated by pulsed laser deposition onto a semi-insulating single-crystal GaAs substrate. The results of XPS analysis of the Ge:Mn layers reveal a change in the line shape of germanium and manganese (2p) in the surface region compared to deeper layers, which indicates a transition from the oxidized form of the base material (Ge2+ and Ge1+) and impurity (Mn2+) near the surface to the unoxidized state of germanium (Ge 0) and manganese (Mn0) in the interior of the layer. The XPS spectra of the valence electrons of the Ge:Mn structure indicate that the density of states in the valence band of the ferromagnetic Ge:Mn structures is caused not only by mechanical mixing of germanium and manganese. The composition of heterogeneous inclusions in Ge:Mn films has been studied using scanning Auger microscopy.  相似文献   
4.
Films obtained using molecular-beam deposition of SiO powder on c-Si (111) substrates for the purpose of SiO2 system formation with silicon nanocrystals were investigated before and after 900–1100°C annealing by photoluminescence, ultrasoft X-ray emission spectroscopy, X-ray photoelectron spectroscopy, X-ray absorption near-edge structure spectroscopy, and X-ray diffraction. The appearance of (111)-oriented luminescent silicon nanoclusters in considerable amounts upon annealing at T = 1000–1100°C is established in the investigated films. An anomalous phenomenon of X-ray absorption quantum yield intensity reversal for the L 2,3 elementary silicon edge is detected. Models for this phenomenon are suggested.  相似文献   
5.

Nanosized films of stabilized zirconia with Au nanoparticles formed by implanting Au ions are studied by X-ray photoelectron spectroscopy and transmission electron microscopy. The effect of irradiation of films with Au ions and postimplantation annealing on the distribution of chemical elements and zirconium- containing ZrO x compounds over the depth of the films is studied. Based on the data on the dimensional shift of the Au 4 f photoelectron line, the average value of the nanoparticle size is determined.

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6.
This paper reports on the results of investigations into the photoelectric properties and electroluminescence of p-i-n diodes based on GeSi/Si heterostructures with GeSi self-assembled nanoclusters embedded in the i region. The p-i-n diodes are grown through sublimation molecular-beam epitaxy using a vapor-phase source of germanium. The photovoltage spectra of the p-i-n diodes measured at a temperature of 300 K exhibit a photosensitivity band attributed to interband optical transitions in the GeSi nanoclusters. A new approach to analyzing the photosensitivity spectra of the heterostructures containing GeSi thin layers is proposed, and the energy at the edge of the photosensitivity bands assigned to these layers is determined. The electroluminescence observed in the p-i-n diodes at 77 K is associated with the radiative interband optical transitions in GeSi nanoclusters.  相似文献   
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