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Optical absorption in MnGaInS4 single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E gd and E gi are −5.06 × 10−4 and −5.35 × 10−4 eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.  相似文献   
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The temperature dependence of electric conductivity σ(T), the current-voltage characteristics (CVC) and the currents of thermostimulated depolarization (TSD) are studied in GaS:Er single crystals. The location depth of traps, determined from the ohmic region of the CVC in the hightemperature range (300 to 400 K), independent of the per cent content of Er, remains unchanged. Sections of linear (IU), quadratic (IU2), and sharp current growth (IU10) are revealed in the CVC's of GaS: 0.01 at% Er. In the CVC's of GaS containing 0.1 and 0.5 at% Er a cubic section is observed between the sections of quadratic and sharp current growth. Additions of 0.1 to 0.5 at% Er to GaS lead to the appearance of levels distributed quasi-continuously in energies; in the forbidden gap; these levels contribute to a double injection in the region of strong electric fields (4 × 103 to 2 × 104 V/cm) and to an increase of the TSD current by three orders. The location depths of traps, their concentration, the trapping cross-sections, the amount of accumulated charge, and the mobility of minority charge carriers are determined.  相似文献   
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Niftiev  N. N. 《Technical Physics》2020,65(3):407-409
Technical Physics - The spectral distribution of photoconductivity and the temperature dependence of photocurrent in MnGaInS4 single crystals have been investigated. Photoconductivity spectra...  相似文献   
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