Domain structure and properties of triglycine sulfate crystals with profile <Emphasis Type="Italic">D</Emphasis>,<Emphasis Type="Italic">L</Emphasis>-α- and <Emphasis Type="Italic">L</Emphasis>-α-alanine-doped layers

A complex investigation of the domain structure and dielectric properties of triglycine sulfate (TGS) crystals containing profile layers doped with D,L-α-alanine (DLATGS) and L-α-alanine (LATGS) impurities is carried out. The images of the DLATGS and LATGS layers and ferroelectric domains are obtained by piezoelectric force microscopy; the parameters of the domain structure and the degree of unipolarity are determined. It is established that DLATGS layers are multidomain and LATGS stripes are mainly single-domain. The experimental data on the macroscopic dielectric properties of the crystals are compared with the results of a microscopic analysis of the domain structure.     

Application of Scanning Capacitance Force Microscopy for Detecting Impurity Phases in Ferroelectric Triglycine Sulfate

Technical Physics - An inhomogeneous ferroelectric (triglycine-sulfate (TGS) single crystal with a TGS–TGS+Cr periodic growth impurity structure) has been investigated by scanning capacitance...     

Scanning Capacitance Microscopy of Triglycine Sulfate Crystals with the Profile Chromium Distribution

The spatial capacitance distribution, domain wall configuration, and impurity composition of triglycine sulfate TGS–TGS + Cr crystals with a growth periodic impurity structure have been investigated using scanning capacitance microscopy and X-ray fluorescence and topography. The chromium ion concentration in the strips emerging to the surface has been determined, and the periodic impurity distribution has been established. The difference between the chromium concentrations in nominally pure and impurity strips was found to be ~0.08 wt %, which is reflected in a variation in the capacitance image contrast by 0.17%. It is shown that capacitance images carry information about localization of the impurity gradient regions and domain walls and make it possible to establish a correlation between the defect and domain structures of a ferroelectric crystal.