Influence of “ytterbium nanofilm–silicon Si(111)” interfaces on the valence of ytterbium

The work function of ytterbium films of nanometer thickness (from 1 to 16 monolayers) has been measured. The films have been prepared by sputtering of ytterbium in an ultrahigh vacuum on n- and p-type Si(111)7 × 7 silicon substrates with an electrical resistivity from 1 to 20 Ω cm. It has been shown that, in the films with a thickness of less than 8 monolayers, the work function depends nonmonotonically on the amount of ytterbium deposited on the surface (Friedel oscillations), whereas in the films with a thickness of more than 8 monolayers, the work function takes on a constant value (3.3 eV) that exceeds the work function for macroscopic samples (2.6 eV). This difference is associated with the fact that, during the formation of an Yb–Si interface, the large difference in the work functions of ytterbium and silicon (4.63 eV) leads to the transfer of a significant fraction of electrons from the metal to the semiconductor. This transfer of electrons from the film to silicon is accompanied by the lowering of the Yb 5d level below the Fermi level. As a result, the valence of the metal and, accordingly, the work function increase.     

Formation and properties of a binary adsorbed layer in a two-component adsorption system (Sm + Yb)-Si(111)

Low-energy electron diffraction, thermodesorption spectroscopy, and contact potential difference techniques were used in a first study on the coadsorption of Sm and Yb atoms on the Si(111) surface. At comparatively low coverages, in both one-component adsorption systems of the rare-earth metal-Si(111) type and the two-component system (Sm + Yb)-Si(111), the same sequence of diffraction patterns of the (n×1) type, where n=3, 5, and 7, was observed. This indicates that Sm and Yb atoms occupy the same adsorption centers in a mixed film. At higher coverages, at which the \((\sqrt 3 \times \sqrt 3 )R30^\circ \) reconstruction forms in the case of the Sm-Si(111) system and the surface undergoes the 2×1 reconstruction in the Yb-Si(111) system, the structure of the mixed film is governed by the ytterbium coverage θ(Yb). At low ytterbium coverages, θ(Yb)<0.15, superposition of the \((\sqrt 3 \times \sqrt 3 )R30^\circ \) and (2×1) diffraction patterns is observed. For θ (Yb)>0.15, however, the former pattern disappears, whereas the latter persists. A comparison of this evolution of a binary adsorbed layer with the properties of the Sm-Si(111) and Yb-Si(111) systems indicates its anomalous character.     

Friedel oscillations in ytterbium films deposited on the Si(111) 7 × 7 surface

The nonmonotonic dependence of the work function of ytterbium nanofilms deposited on singlecrystal Si(111) on their thickness is experimentally revealed and studied. This dependence is shown to be caused by electron density oscillations in the films (Friedel oscillations), which are generated by the ytterbium-silicon interface. These oscillations originate, in turn, from appreciable charge transfer from the ytterbium film having a low work function to silicon.     

Modification of several physicochemical properties of a high-temperature superconducting yttrium ceramic upon doping with gold

The influence of additions of gold (5 and 10 at. %) on the lattice parameters, the superconducting transition temperature, and the diamagnetic susceptibility of the high-temperature superconducting ceramic YBa₂Cu₃O_7−δ is investigated. The influence of gold on the kinetics of the release of weakly bound oxygen during heating of the ceramic in a vacuum is also studied. It is shown that doping the ceramic with gold causes uniaxial expansion of the lattice of the material, a significant decrease in the diamagnetic susceptibility, and nonmonotonic variation of the kinetic parameters of the oxygen release, while the superconducting transition temperature remains nearly unchanged. Zh. Tekh. Fiz. 67, 31–34 (February 1997)     

Thermally activated reconstruction in Yb-Si(111) thin-film structures

The electronic properties and mechanisms of formation of Yb-Si(111) thin-film structures, produced by room-temperature deposition of Yb atoms on the Si(111)7×7 surface are studied by Auger electron and LEED spectroscopy and the contact potential difference method. A study is also made of the effect of heating to 800 K on the properties of these structures. The interface is shown to form by the Stransky-Krastanov mechanism. Heating the Yb-Si(111) system is found to result in a very high (up to 1 eV) increase of the work function for all Yb atom concentrations on the silicon surface. In the adsorption stage, this increase is due to the growth of 2D ytterbium domains, which is accompanied by the formation of polarized domains from the silicon surface atoms with dangling valence bonds. The dipoles are oriented in such a way that their formation reduces the total energy of the Yb-Si(111) system and increases the work function. In the stage of silicide formation, the increase of the work function under heating is ultimately due to the appearance of a layer of silicon atoms on the Yb-Si(111) surface. Fiz. Tverd. Tela (St. Petersburg) 39, 1672–1678 (September 1997)     

Specific features of the formation of ytterbium films on the Si(111) surface at room temperature

The processes accompanying the formation of ytterbium films on the Si(111) surface at room temperature are investigated by the contact potential difference method, Auger electron spectroscopy, low-energy electron diffraction, and thermal desorption spectroscopy. It is shown that the grown metal films are uniform in thickness and that Si atoms virtually do not dissolve in the films. The atoms of the silicon substrate can diffuse in limited amounts into the Yb metal film only when the surface is bombarded by high-energy primary electron beams employed in Auger electron spectroscopy. The results obtained permit the conclusion that the previously observed oscillations of the work function in Yb-Si(111) thin-film structures cannot originate from dissolution of silicon atoms in the ytterbium film.     

Influence of CO Admolecules on the Electronic State of Ytterbium Nanofilms Grown on Silicon Substrates

Technical Physics - The adsorption of carbon monoxide (CO) molecules on ytterbium nanofilms from 16 to 200 monolayers thick (61–76 nm) has been studied. The films have been grown on...     

Size dependences in the adsorptive properties of the surface of ytterbium nanofilms deposited on silicon: The CO-Yb-Si(111)7 × 7 system

This paper reports on a study of the adsorption of CO molecules on the surface of ytterbium nanofilms of different thicknesses, which were sublimed on Si(111)7 × 7 at room temperature. Dependences of two types were investigated: the surface concentration of adsorbed molecules vs. CO dose expressed in langmuirs and the work function of films vs. CO dose. It was shown that the behavior of these dependences is mediated by size effects and Friedel oscillations generated by the ytterbium-silicon interface. Both effects exert an influence on the binding of CO molecules to the surface. At low molecule concentrations, this binding is effected through lone electron pairs localized at the carbon ends of the molecules. These electrons form a donor-acceptor bond to the vacant 5d level of the metal, with the level dropping below the Fermi level. At high CO molecule concentrations, the pattern becomes more complex; indeed, the enhanced Coulomb interaction gives rise to a partial transfer of electrons from the 5d level to the vacant 2π* orbital of CO molecules.     

Mechanisms of formation and the electronic properties of the Yb-Si(100) thin-film system

The formation and properties of the Yb-Si(100) thin-film system were studied by high-resolution photoelectron spectroscopy with synchrotron radiation, Auger electron spectroscopy, the contact potential difference technique, and low-energy electron diffraction measurements over a wide range of coverages and at different temperatures. It was established that the formation of the Yb-Si(100) system prepared by solid-phase epitaxy occurs through a mechanism close to the Stranski-Krastanow mechanism. It was shown that, at submonolayer coverages, it is primarily these two-dimensional (2D) 2 × 3 and 2 × 6 structures that are formed, while at higher coverages a three-dimensional Yb silicide film grows. Data on the morphology and phase composition of the silicide film and on the electronic state of the Si atoms and the valence state of the Yb atoms in the silicide and the 2D structures, as well as on the atomic structure of these films, were obtained. The components of the Si 2p spectra were studied for different coverages. The relation between the shape of these spectra obtained for multilayer Yb silicide films and their phase composition was revealed.