Synthesis and Characterization of Two New Compounds: N(C2H4NH3)3(H2TO4)(HTO4)·2H2O (T = P,As)

The synthesis and structures of two new compounds with the general formula N(C₂H₄NH₃)₃(H₂TO₄)(HTO₄)·2H₂O (T = P, As) are reported. They crystallize with triclinic unit cells and are isotropic. We determined the structure of phosphate salt. The following unit cell parameters were found: a = 9.886(4), b = 9.308(2), c = 10.140(3) Å, α = 109.38(2), β = 108.83(3), γ = 74.40(3)°, V = 819.2(5) ų, and ρ_cal. = 1.537 g · cm^?3. The crystal structure was solved with a final R = 0.042 for 3748 with I > 3σ I). The space group is P-1 and Z = 2. The atomic arrangement can be described as a three-dimensional network of hydrogen bonds made up from H_nPO₄ ^3?n (n = 1, 2) anions and H ₂ O molecules between which are trapped the tris(2-ammoniumethyl)amine cations. Solid-state ¹³C and ³¹P MAS-NMR spectroscopies are in agreement with X-ray structure. Ab initio calculations allow the attribution of the phosphorus signals to the independent crystallographic sites.     

Investigation of the vibrational modes of ZnO grown by MOCVD on different orientation planes

Wurtzite ZnO thin films were prepared on sapphire substrate by metal organic chemical vapor deposition (MOCVD). Raman scattering studies on different crystallographic textures were performed in the backscattering geometry, and polarization effect is investigated in different configurations and . ZnO Raman modes are investigated in each texture. In the case of ZnO thin film deposed on r‐() sapphire plane and using backscattering geometry, new Raman line was observed at 390 cm⁻¹ because this mode has not been noticed in this geometry. It is shown that the frequencies of the quasi‐phonon modes of the examined thin film are in good agreement with the theoretical values calculated within the framework of Loudon model. Copyright © 2014 John Wiley & Sons, Ltd.     

Synthesis and photochemical properties of novel pentamethylated norbornadiene containing polyimides

A novel pentamethylated norbornadiene (NBD) based dianhydride, α,α′‐bis‐(3,4,5,6,7‐pentamethylcyclopenta‐2,4‐dienyl)meta‐xylene‐1,2‐dianhydride (3), was prepared from α,α′‐bis‐(pentamethylcyclopentadienyl)meta‐xylene (1) and acetylene dicarboxylic acid. The bis‐adduct formed via Diels–Alder reaction afforded tetra‐acid (2), which was chemically cyclodehydrated to lead the targeted dianhydride (3). New polyimides containing NBD moieties in the main chain were prepared from the dianhydride monomer (3) and various aromatic diamines. The chemical structure of the polymers was confirmed by both ¹H and ¹³C NMR analysis. Their Molecular weights were also measured by SEC. All of these polyimides are soluble at room temperature in common organic solvents, such as chloroform, dichloromethane, THF, DMSO, DMF, and NMP, and show good thermal stabilities. The photochemical isomerization of the NBD into quadricyclane (QC) was investigated by UV/vis spectrophotometry from polymer films using visible sunlight as irradiation source. It was found that the kinetic rate of the conversion NBD‐QC which proceeded smoothly is a first kinetic order. The stored energies released by the transformation of QC groups into NBD ones of the irradiated polymer films were also evaluated by DSC measurement and were found to be around 90 kJ mol^?1. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

The photoluminescence (PL) at low temperature of three delta-doped AlGaAs/GaAs heterostructures is investigated under continuous and pulsed excitations. The PL under continuous excitations allows the identification of the trapping centres and probes the carrier's transfer to the GaAs channel. The time-resolved photoluminescence (TRPL) inquires about carrier dynamics and gives radiative lifetimes of different levels. The DX level shows two time constants of the intensity decay relating the splitting of the valence band under impurity strains which reduce the crystal symmetry. The two time constants evolve with temperature and exhibit an increase near T=50 K.     

Excitation process and photoluminescence properties of Tb and Eu ions in SnO2 and in SnO2: Porous silicon hosts

Tin oxide (SnO₂)-layers-doped terbium and europium ions are elaborated by the sol-gel method on silicon substrates. After annealing at 500 °C, the transmission electron microscopy revealed a crystallization of tin oxide.The emission properties of rare-earth in SnO₂ are studied systematically against temperature annealing and Tb³⁺ concentration. The PL spectrum is optimal after annealing at 900 °C and the corresponding photoluminescence (PL) decay is nearly exponential, showing that the sample is homogenous and the PL process can be described by two levels system.The concentration effect shows a quenching of the PL intensity for Tb³⁺ concentration above 4%. From the investigation of the decay rate from the ⁷F₅ state within terbium concentration, we show that self-quenching is insured by dipole - dipole interaction. The evolutions of both PL intensity and PL lifetime versus temperature are studied. The PL intensity and PL lifetime are enhanced by deposing SnO₂:Tb³⁺ and SnO₂:Eu³⁺ in porous silicon. We show that an efficient excitation transfer from Si nanocrystallites to RE ions can occur.     

Ondes adhérence–glissement–décollement sous contact unilatéral frottantStick–slip–separation waves in unilateral and frictional contact

A numerical study on the dynamic response of a mechanical system composed of two coaxial cylinders in relative rotation and unilateral contact with Coulomb friction is presented. This discussion complements the semi-analytical results on stick–slip waves given in Moirot, Nguyen, C. R. Acad. Sci. Paris Sér. IIb 328 (2000) 663–669, by some numerical simulations on the dynamic transition of the system from a given initial state to a surface wave. The case of stick–slip–separation waves is considered. To cite this article: A. Oueslati et al., C. R. Mecanique 331 (2003).     

Aspect ratio effects on three-dimensional incompressible flow in a two-sided non-facing lid-driven parallelepiped cavity

A numerical study of the three-dimensional fluid flow has been carried out to determine the effects of the transverse aspect ratio, Ay, on the flow structure in two-sided non-facing lid-driven cavities. The flow is complex, unstable and can undergo bifurcation. The numerical method is based on the finite volume method and multigrid acceleration. Computations have been investigated for several Reynolds numbers and various aspect ratio values. At a fixed Reynolds number, Re=500, the three-dimensional flow characteristics are analyzed considering four transverse aspect ratios, Ay=1,0.75,0.5 and 0.25. It is observed that the transition to the unsteady regime follows the classical scheme of a Hopf bifurcation. An analysis of the flow evolution shows that, at Ay=0.75, the flow bifurcates to a periodic regime at (Re=600) with a frequency f=0.093 less than the predicted value in the cubical cavity. A correlation is established when Ay=0.5 and gives the critical Reynolds number value. At Ay=0.25, the periodic regime occurs at high Re value beyond 3500, after which the flow becomes chaotic. It is shown that, when increasing Ay over the unit, the flow in the cavity exhibits a complex behavior. The kinetic energy transmission from the driven walls to the cavity center is reduced at low Ay values.     

The improvement of InAs/GaAs quantum dot properties capped by Graphene

InAs self‐assembled quantum dots (QDs) were grown by molecular beam epitaxy on (001) GaAs substrate. Uncapped and capped QDs with GaAs and graphene layers were studied using atomic force microscopy and Raman spectroscopy. Graphene multi‐layer was grown by chemical vapor deposition and transferred on InAs/GaAs QDs. It is well known that the presence of a cap layer modifies the size, shape, and density of the QDs. According to the atomic force microscopy study, in contrast to the GaAs capped sample, which induce a dramatic decrease of the density and height of dots, graphene cap layer sample presents a slight influence on the surface morphology and the density of the islands compared with the uncapped one. The difference shown in the Raman spectra of the samples is due to change of strain and alloy disorder effects on the QDs. Residuals strain and the relaxation coefficients have been investigated. All results confirm the best crystalline quality of the graphene cap layer dots sample relative to the GaAs capped one. So graphene can be used to replace GaAs in capping InAs/GaAs dots. To our knowledge, such study has not been carried out until now. Copyright © 2013 John Wiley & Sons, Ltd.     

A Fluorescent and Phosphorescent Nanoporous Solid: Crystalline Calix[4]arene

Calix[4]arene forms elongated nanoporous microcrystals. The pores are linear nano-channels (1.7 nm diameter) arranged in a honeycomb network. The crystals luminesce at room temperature according to a variety of processes that include monomer fluorescence (lifetime of ca. 1.1 ns), dimer fluorescence (lifetime of ca. 5.4 ns), and monomer phosphorescence (lifetime of ca. 2 s). The dimers result from pi-orbital overlap of adjacent phenol groups from neighboring nano-channels, with C-C distances of ca. 4 A.