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1.
V. M. Novotortsev S. A. Varnavskii S. F. Marenkin L. I. Koroleva R. V. Demin V. M. Trukhan S. O. Klimonskii V. D. Kuznetsov 《Russian Journal of Inorganic Chemistry》2006,51(8):1153-1156
Solid solutions Cd1?x MnxGeP2 (x=0?0.19) have been synthesized and identified. In these solutions, the unit cell parameters decrease with an increase in the manganese content. The solid solution Cd0.81Mn0.19GeP2 is a ferromagnet with the Curie temperature T C ≈ 311 K. The paramagnetic moment of Mn2+ ions equal to 5.8 μB, as well as the spontaneous magnetization constituting 76% of the total magnetization of a crystal, has been determined with the use of the Langevin function. The origin of ferromagnetism in CdGeP2:Mn is exchange mediated by charge carriers (holes). These holes are caused by cationic defects in the structure of chalcopyrite. 相似文献
2.
Saypulaeva L. A. Khizriev K. Sh. Melnikova N. V. Tebenkov A. V. Babushkin A. N. Zakhvalinskii V. S. Ril A. I. Marenkin S. F. Gadjialiev M. M. Pirmagomedov Z. Sh. 《Physics of the Solid State》2021,63(8):1301-1304
Physics of the Solid State - The paper presents the results of a study on the Electrical resistance and magneto-resistance (MR) of the composite, consisting of a Dirac semimetal Cd3As2 and 30 mol %... 相似文献
3.
S. F. Marenkin V. M. Trukhan I. V. Fedorchenko S. V. Trukhanov T. V. Shoukavaya 《Russian Journal of Inorganic Chemistry》2014,59(4):355-359
A new ferromagnetic material based on a Cd3As2 + MnAs composite with the Curie point of 320 K has been prepared. Magnetic and electrical properties of the composite have been found to be determined by manganese arsenide nanoclusters. The composite has metallic conduction. Its resistance decreases with increasing magnetic field both at low and room temperatures, indicating spin-dependent scattering mechanisms and exchange interactions between magnetic nanoclusters in the composite. 相似文献
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I. Ril’ A. V. Kochura S. F. Marenkin M. G. Vasil’ev 《Russian Journal of Inorganic Chemistry》2018,63(9):1117-1121
Protocols for sputtering stoichiometric aluminum antimonide thin films were developed by calculating aluminum and antimony vapor condensation flux densities. Aluminum and antimony were sputtered separately. The high chemical reactivity of nanosized aluminum and antimony films made it possible to reduce the synthesis temperature considerably (far below the melting point of the compound). The synthesis involved thermal annealing. The reaction between aluminum and antimony films started at 470°С. Optimal AlSb formation parameters comprise annealing at 540°С for at least 10 h. Film synthesis steps were studied by X-ray powder diffraction, optical, electron, and atomic force microscopy. The composition was monitored by energy dispersive X-ray spectra. The films were found to have hole conductivity; the 300-K charge density and charge mobility in the films are 1 × 1019 cm–3 and 1 × 102 cm2/(V s), respectively. 相似文献
6.
V. G. Orlov M. P. Shlikov E. A. Kravchenko S. F. Marenkin S. A. Varnavskii 《Hyperfine Interactions》2004,159(1-4):173-179
The 121Sb NQR spectra of CdSb single crystal were measured in the presence of weak (up to 500 Oe) external magnetic fields. As the
analysis of the 121Sb EFG symmetry showed, two magnetically nonequivalent Sb sites exist in the CdSb crystal lattice. An upper limit of the local
magnetic field, which may exist in CdSb characterized with the observed 121Sb NQR spectra, was estimated by modeling the Zeeman perturbed patterns. This amounted to H
loc ∼10 G, hence being much less than earlier found local fields H
loc ∼30–200 G in bismuth-based compounds. 相似文献
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A. Yu. Mollaev I. K. Kamilov R. K. Arslanov T. R. Arslanov U. Z. Zalibekov V. M. Novotortsev S. F. Marenkin 《Bulletin of the Russian Academy of Sciences: Physics》2009,73(7):992-994
The baric (P ≤ 5GPa) and magnetic-field (H ≤ 5 kOe) dependences of the transverse magnetore-sistance Δρ xx /ρ0 have been measured for p-InAs (R H = 22.5 cm3/C, ρ = 0.15 Ω cm) and the new ferromag-netic semiconductor p-CdGeAs2 (R H = 5 cm3/C, ρ = 0.62 Ω cm), doped with a magnetic impurity (Mn), near the temperature T = 297 K. The dependences Δρ xx /ρ0 (P, H) for p-InAs:Mn and p-CdGeAs2:Mn exhibit a magnetoresistive effect with an increase in pressure, and a pressure-induced magnetoresistance hysteresis is observed in p-CdGeAs2:Mn with a pressure drop. 相似文献
9.
Saypulaeva L. A. Gadzhialiev M. M. Alibekov A. G. Melnikova N. V. Zakhvalinskii V. S. Ril’ A. I. Marenkin S. F. Babushkin A. N. 《Physics of the Solid State》2020,62(6):942-946
Physics of the Solid State - The pressure dependences of electrical resistance, Hall coefficient, charge carrier mobilities, and magnetoresistance of the Cd3As2–20 mol % MnAs composite are... 相似文献
10.
Saipulaeva L. A. Gadzhialiev M. M. Pirmagomedov Z. Sh. Efendieva T. N. Alibekov A. G. Abdulvagidov Sh. B. Mel’nikova N. V. Zakhvalinskii V. S. Marenkin S. F. 《Technical Physics》2020,65(7):1083-1086
Technical Physics - Samples of tricadmium diarsenide with MnAs nanogranules (44.7 mol % MnAs) are synthesized. The morphology of the samples is studied by X-ray phase analysis and electron... 相似文献