Ferromagnetic material CdGeP2:Mn for spintronics

Solid solutions Cd_1?x Mn_xGeP₂ (x=0?0.19) have been synthesized and identified. In these solutions, the unit cell parameters decrease with an increase in the manganese content. The solid solution Cd_0.81Mn_0.19GeP₂ is a ferromagnet with the Curie temperature T _C ≈ 311 K. The paramagnetic moment of Mn²⁺ ions equal to 5.8 μ_B, as well as the spontaneous magnetization constituting 76% of the total magnetization of a crystal, has been determined with the use of the Langevin function. The origin of ferromagnetism in CdGeP₂:Mn is exchange mediated by charge carriers (holes). These holes are caused by cationic defects in the structure of chalcopyrite.     

Electrical Resistance and Magnetoresistance of Cd3As2–30 mol % MnAs under High Pressures

Physics of the Solid State - The paper presents the results of a study on the Electrical resistance and magneto-resistance (MR) of the composite, consisting of a Dirac semimetal Cd3As2 and 30 mol %...     

Magnetic and electrical properties of Cd3As2 + MnAs composite

A new ferromagnetic material based on a Cd₃As₂ + MnAs composite with the Curie point of 320 K has been prepared. Magnetic and electrical properties of the composite have been found to be determined by manganese arsenide nanoclusters. The composite has metallic conduction. Its resistance decreases with increasing magnetic field both at low and room temperatures, indicating spin-dependent scattering mechanisms and exchange interactions between magnetic nanoclusters in the composite.     

Phase diagram of ZnAs2–MnAs system

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Magnetism-Related Properties of CdSb Revealed by the Zeeman 121Sb NQR Spectra

The ¹²¹Sb NQR spectra of CdSb single crystal were measured in the presence of weak (up to 500 Oe) external magnetic fields. As the analysis of the ¹²¹Sb EFG symmetry showed, two magnetically nonequivalent Sb sites exist in the CdSb crystal lattice. An upper limit of the local magnetic field, which may exist in CdSb characterized with the observed ¹²¹Sb NQR spectra, was estimated by modeling the Zeeman perturbed patterns. This amounted to H _loc ∼10 G, hence being much less than earlier found local fields H _loc ∼30–200 G in bismuth-based compounds.     

Aluminum Antimonide Thin Films: Structure and Properties

Protocols for sputtering stoichiometric aluminum antimonide thin films were developed by calculating aluminum and antimony vapor condensation flux densities. Aluminum and antimony were sputtered separately. The high chemical reactivity of nanosized aluminum and antimony films made it possible to reduce the synthesis temperature considerably (far below the melting point of the compound). The synthesis involved thermal annealing. The reaction between aluminum and antimony films started at 470°С. Optimal AlSb formation parameters comprise annealing at 540°С for at least 10 h. Film synthesis steps were studied by X-ray powder diffraction, optical, electron, and atomic force microscopy. The composition was monitored by energy dispersive X-ray spectra. The films were found to have hole conductivity; the 300-K charge density and charge mobility in the films are 1 × 10¹⁹ cm^–3 and 1 × 10² cm²/(V s), respectively.     

Growth and structure of ZnSnAs2 crystals

High-quality ZnSnAs₂ (I) single crystals have been grown. The unit cell parameters of compound I have been refined (a = b = 5.8360(1), c = 11.686(2) Å), and its crystal structure has been determined.     

Manganese Pnictides MnP,MnAs, and MnSb are Ferromagnetic Semimetals: Preparation,Structure, and Properties (a Survey)

Manganese pnictides MnP, MnAs, and MnSb are ferromagnetic semimetals and have some unique properties, namely, high Curie points, considerable magnetic anisotropy, and giant magnetocaloric effect. Experimental and theoretical studies showed that these compounds can enter a superconducting state under high external pressures. Manganese pnictides are widely used in design of hybrid structures, such as spin diodes and transistors, in combination with semiconductors. The survey focuses on the design and properties of such the structures.     

Electric and Galvanomagnetic Properties of Cd3As2–20 mol % MnAs Composite under High Pressure

Physics of the Solid State - The pressure dependences of electrical resistance, Hall coefficient, charge carrier mobilities, and magnetoresistance of the Cd3As2–20 mol % MnAs composite are...