X‐ray induced degradation of surface bound azido groups during XPS analysis

Mesoporous silica SBA‐15 was synthesized and silanized with azidopropyl triethoxysilane in order to design a clickable material. Fourier transform infrared analysis permitted to prove the attachment of the azidopropylene groups to SBA‐15 resulting in the reactive and functional material N₃‐SBA‐15. X‐ray photoelectron spectroscopy was used to determine the surface composition of SBA‐15. However, we unexpectedly found that the surface bound azido groups undergo X‐ray induced decomposition during the X‐ray photoelectron spectroscopy analysis resulting in the formation of nitrenes. These are very reactive groups able to intercalate C―C and C―H bonds of the propylene chains as judged from the N1s peak shape. Possible mechanisms of intercalation are suggested. C1s and N1s peaks were recorded at different exposure time. N/C, N⁺/N and N⁺/C undergo exponential decay. N⁺/N reaches the value of zero in less than 80 min of exposure to the X‐ray source. The N⁺/C decay plot was fitted with first‐order kinetics, and the decomposition kinetic constant (k_dec) was found to equal to 516.4 s^?1. This is a fast X‐ray induced degradation which must be considered with care when examining clickable materials with surface bound alkyl azido groups. Copyright © 2016 John Wiley & Sons, Ltd.     

Enhanced UV photosensing properties of ZnO nanowires prepared by electrodeposition and atomic layer deposition

A new process enabling the synthesis of zinc oxide (ZnO) and Al-doped ZnO nanowires (NWs) for photosensing applications is reported. By combining atomic layer deposition (ALD) for the seed layer preparation and electrodeposition for the NW growth, high-quality ZnO nanomaterials were prepared and tested as ultraviolet (UV) sensors. The obtained NWs are grown as arrays perpendicular to the substrate surface and present diameters between 70 and 130 nm depending on the Al doping, as seen from scanning electron microscopy (SEM) studies. Their hexagonal microstructure has been determined using X-ray diffraction and Raman spectroscopy. An excellent performance in UV sensing has been observed for the ZnO NWs with low Al doping, and a maximal photoresponse current of 11.1 mA has been measured. In addition, initial studies on the stability have shown that the NW photoresponse currents are stable, even after ten UV on/off cycles.     

Influence of disorder on microcavity polariton linewidths

Polariton linewidths have been measured in a series of microcavities with different excitonic and cavity inhomogeneous broadening in the weak-disorder regime. We show experimentally that the behaviour of the polariton linewidths as a function of the detuning depends on the asymmetric line shape of an inhomogeneously broadened exciton line and particularly the disorder effect can be modulated and cancelled around resonance. When the disorder contribution is minimal, the behaviour of the cavity polariton linewidths tends to one of the homogeneous broadening system.     

Solvent free synthesis of 1,3-diaryl-2-propenones catalyzed by commercial acid-clays under ultrasound irradiation

This paper presents a novel solvent free method of synthesis of trans-chalcones. The method was based on ultrasound irradiation of the reagents (aryl methyl ketones and aryl aldehydes) in presence of commercial acid-montmorillonites as catalysts. The trans-chalcones were synthesized in high yields (85–95%) and excellent selectivity in a short reaction time.     

Study of n type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels

Photoluminescence (PL) analysis is used to study porous layers elaborated by electrochemical etching of n⁺ Si-doped GaAs substrate with different etching times. Temperature and power dependence photoluminescence (PL) studies were achieved to characterize the effect of the etching time on the deep levels of the n⁺ Si-doped GaAs. The energy emission at about 1.46 eV is attributed to the band-to-band (B-B) (e-h) recombination of a hole gas with electrons in the conduction band. The emission band is composed of four deep levels due to the complex of (V_AsSi_GaV_Ga), a complex of a (Ga vacancy - donor - As vacancy), a (Si_Ga-V_Ga³⁻) defect or Si clustering, and a (gallium antisite double acceptor-effective mass donor pair complex) and which peaked, respectively, at about (0.94, 1, 1.14, and 1.32 eV). The PL intensity behavior as function of the temperature is investigated, and the experimental results are fitted with a rate equation model with double thermal activation energies.     

A DFT study of the hydration of monophosphate complexes of iron (III),

A systematic theoretical DFT study of the bonding between the cation Fe³⁺ and the anion was carried out. The role of water ligands is presented. Several isomers with tetrahedral, bipyramidal and octahedral environments around the iron ion were investigated. 5-fold coordination of the Fe³⁺ cation is found when 5 and 6 water molecules are included. Calculated infrared spectra are also presented.     

Photoelectrochemical activity of ZnO:Ag/rGO photo-anodes synthesized by two-steps sol-gel method

This work investigated the influence of silver plasmon and reduced graphene oxide (rGO) on the photoelectrochemical performance (PEC) of ZnO thin films synthesized by the sol-gel method. The physicochemical properties of the obtained photo-anodes were systematically studied by using several characterization techniques. The x-ray diffraction analysis showed that all samples presented hexagonal wurtzite structure with a polycrystalline nature. Raman and energy dispersive x-ray (EDX) studies confirmed the existence of both Ag and rGO in ZnO:Ag/rGO thin films. The estimated grain size obtained from scanning electron microscopy (SEM) analysis decreased with Ag doping, then increased to a maximum value after rGO addition. The UV-vis transmission spectra of the as-prepared ZnO:Ag and ZnO:Ag/rGO thin films have shown a reduction in the visible range with a redshift at the absorption edges. The bandgaps were estimated to be around 3.17 eV, 2.7 eV, and 2.52 eV for ZnO, ZnO:Ag, and ZnO:Ag/rGO, respectively. Moreover, the electrical measurements revealed that the charge exchange processes were enhanced at the ZnO:Ag/rGO/electrolyte interface, accompanied by an increase in the (PEC) performance compared to ZnO and ZnO:Ag photo-anodes. Consequently, the photocurrent density of ZnO:Ag/rGO (0.2 mA·cm^-2) was around 4 and 2.22 times higher than photo-anodes based on undoped ZnO (0.05 mA·cm^-2) and ZnO:Ag (0.09 mA·cm^-2), respectively. Finally, from the flat band potential and donor density, deduced from the Mott-Schottky, it was clear that all the samples were n-type semiconductors with the highest carrier density for the ZnO:Ag/rGO photo-anode.     

Effect of annealing temperatures and of high content of the iron ion (Fe<Superscript>3+</Superscript>)-doping on transition anatase–rutile phase of nanocrystalline TiO<Subscript>2</Subscript> thin films prepared by sol–gel spin coating

Titanium dioxide doped with iron (III) was prepared by sol–gel Spin Coating method. The phase structures, morphologies, particle size of the doped TiO₂ have been characterized by X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM) and ultraviolet–visible (UV–Vis) spectrophotometer. The XRD and Raman results show that the 10% Fe³⁺-doped TiO₂ thin films crystallize in anatase phase between 600 and 800 °C, and into the anatase–rutile phase at 1,000 °C, and further into the rutile phase when the content of Fe³⁺ increases (20%). The grain size calculated from XRD patterns shows that the crystallinity of the obtained anatase particles increased from 39.4 to 43.4 nm as the temperature of annealing increase, whereas the size of rutile crystallites increases, with increasing Fe³⁺ concentrations from 36.9 to 38.1 nm. The AFM surface morphology results confirmed that the particle size increases by increasing the annealing temperature and also with an increasing of Fe³⁺ content. The optical band gap (E _g) of the films was determined by the UV–Vis spectrophotometer. We have found that the optical band gap decreased with an increasing of annealing temperatures and also with an increasing of Fe³⁺ content.     

Improvement of photoluminescence and electrical properties of porous silicon layer treated with lanthanum

The influence of surface treatment of porous silicon (PS) in lanthanum (La) containing solution during different times on its photoluminescence and electrical properties has been investigated. For this purpose, chemical composition, structural, vibrational, photoluminescence and electrical characteristics of the porous silicon layer with and without lanthanum were examined using X-ray diffractometry (XRD), energy dispersive X-ray (EDX) spectroscopy, Fourier transmission infrared (FTIR) spectroscopy, photoluminescence (PL) spectroscopy and current–voltage (I–V) measurements. The results indicate that porous silicon layers treated with lanthanum exhibit an enhancement of photoluminescence intensity and show an improvement current intensity compared to untreated porous silicon layer.