Formation of a Corrugated Surface on a Carbon Fiber under High-Fluence Irradiation with Nitrogen Ions

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques - The behavior of the surface of carbon fibers based on polyacrylonitrile, which reinforce the KUP-VM composite, upon...     

Nanoparticle process formation in zinc implanted silicon with followed thermal annealing

Results of temperature treatment effect on near surface layer properties of Zn ion implanted Si substrate are presented. Radiation induced point defects and Zn in depth profile was studied by Rutherford back scattering (RBS) method with use of channeling technique. Topology of substrate surface was studied by atomic force microscopy (AFM) and scaning electron microscope (SEM). Phase composition of samples was test by x-ray diffraction in grazing geometry.     

Molecular cytogenetic organization of polytene chromosomes

The results of the works carried out in the Laboratory of Molecular Cytogenetics (Institute of Cytology and Genetics of Siberian Branch of the RAS, Novosibirsk) devoted to the molecular genetic analysis of main units of polytene chromosomes, bands, interbands, and puffs, as well as intercalary and pericentric heterochromatin, are summarized. The results are discussed in terms of the dynamic model of organization of polytene chromosomes.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1622–1638, September, 1995.     

Modification of Zinc-Implanted Silicon by Swift Xenon Ion Irradiation

50 keV ⁶⁴Zn⁺ ions to a dose of 5 × 10¹⁶ cm^–2 are implanted into substrates of single-crystal n-type silicon. Then the samples are irradiated at room temperature with 167 MeV ¹³²Xe²⁶⁺ ions with a fluence ranging from 1 ×10¹² up to 5 × 10¹⁴ cm^–2. Changes in the structure and properties on the sample surface and in its body are studied by scanning electron microscopy, energy dispersive microanalysis, atomic force microscopy, time-of-flight secondary ion mass spectrometry, and photoluminescence.     

Changes in the Structure and Properties of Quartz Successively Implanted by Zn and F Ions during Thermal Annealing

Crystallography Reports - The temperature dependences of structural and phase transformations in quartz successively implanted by zinc and fluorine during annealing in nitrogen have been studied....     

Study of silicon implanted with zinc and oxygen ions via Rutherford backscattering spectroscopy

The structural features and dopant profiles of a Si surface layer implanted with Zn⁺ and O⁺ ions are studied via Rutherford backscattering spectroscopy based on the analysis of He²⁺-ion spectra with the use of the channeling technique. The doping-impurity redistribution is analyzed upon the formation of zinc-oxide nanoparticles. The sample surface morphology is examined by means of atomic-force microscopy and scanning electron microscopy under secondary-electron emission conditions. X-ray phase analysis of the implanted layers is carried out.