Coherence and correlation in laser excitation of semiconductor quantum wells

Il Nuovo Cimento D - The concept of coherence due to optical excitation of an ensemble of two-level atoms is relatively simple and well established. For the laser-excited electron-hole pairs or...     

A one-parameter formula for estimating the Λ well depth

A one parameter, semi-empirical formula for Λ-binding energy of heavy hypernuclei in the inverse powers of core mass number (A _c) has been developed in the framework of the folding model. Unlike similar calculations reported by other authors (Deloff 1971; Daskaloyanniset al 1985), we are able to take into account the effect arising from the difference in the number of protons and neutrons of the core nuclei having same mass number. The radius and diffuseness are parametrized using the experimentally known charge density data of a fairly large number of medium and heavy nuclei. The well depth parameter (i.e. Λ-binding energy in infinite nuclear matter) in the formula is obtained from a fit to theB _Λ data of _Λ ²⁸ Si, _Λ ⁴⁰ Ca, _Λ ⁵¹ V and _Λ ³⁹ Y. Using the original Λ-nucleus potential, theB _Λ of ground and the experimentally known excited states of these hypernuclei have also been calculated by solving numerically the two-body Schrödinger equation. The agreement with the experimental data is satisfactory.     

Spin relaxation of electrons excited in p-doped semiconductor heterostructures

We present a calculation of the spin-relaxation time of photoexcited electrons in p-doped quantum wells of GaAs with the spin-flip mechanism due to the electron–hole exchange interaction. We have observed shorter spin-relaxation times for electrons close to the conduction-band edge when including the spin mixing of the valence-hole states. This spin mixing allows exchange spin-relaxation channels which are energy forbidden in the case of pure-spin holes.     

Progress in Symmetric and Asymmetric Superlattice Quantum Well Infrared Photodetectors

Herein, two challenges are addressed, which quantum well infrared photodetectors (QWIPs), based on III‐V semiconductors, face, namely: photodetection within the so‐called “forbidden gap”, between 1.7 and 2.5 microns, and room temperature operation using thermal sources. First, to reach this forbidden wavelength range, a QWIP which consists of a superlattice structure with a central quantum well (QW) with a different thickness is presented. The different QW in the symmetric structure, which plays the role of a defect in the otherwise periodic structure, gives rise to localized states in the continuum. The proposed InGaAs/InAlAs superlattice QWIP detects radiation around 2.1 microns, beyond the materials bandoffset. Additionally, the wavefunction parity anomaly is explored to increase the oscillator strength of the optical transitions involving higher order states. Second, with the purpose of achieving room temperature operation, an asymmetric InGaAs/InAlAs superlattice, in which the QW with a different thickness is not in the center, is used to detect infrared radiation around 4 microns at 300 K. This structure operates in the photovoltaic mode because it gives rise to states in the continuum which are localized in one direction and extended in the other, leading to a preferential direction for current flow.