首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2924篇
  免费   99篇
  国内免费   9篇
化学   1928篇
晶体学   31篇
力学   67篇
数学   339篇
物理学   667篇
  2023年   24篇
  2022年   58篇
  2021年   98篇
  2020年   63篇
  2019年   65篇
  2018年   63篇
  2017年   49篇
  2016年   101篇
  2015年   97篇
  2014年   98篇
  2013年   187篇
  2012年   184篇
  2011年   205篇
  2010年   128篇
  2009年   132篇
  2008年   183篇
  2007年   158篇
  2006年   127篇
  2005年   120篇
  2004年   104篇
  2003年   63篇
  2002年   82篇
  2001年   51篇
  2000年   47篇
  1999年   42篇
  1998年   38篇
  1997年   39篇
  1996年   30篇
  1995年   31篇
  1994年   34篇
  1993年   30篇
  1992年   32篇
  1991年   25篇
  1990年   18篇
  1989年   10篇
  1988年   22篇
  1987年   9篇
  1986年   11篇
  1985年   17篇
  1984年   18篇
  1983年   11篇
  1982年   28篇
  1981年   14篇
  1980年   16篇
  1979年   7篇
  1978年   8篇
  1977年   11篇
  1976年   9篇
  1974年   9篇
  1973年   6篇
排序方式: 共有3032条查询结果,搜索用时 15 毫秒
1.
In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for the growth of single-layer graphene (SLG). Despite the scattering of guidelines and procedures, variables such as the surface texture/chemistry of catalyst metal foils, carbon feedstock, and growth process parameters have been well-scrutinized. Still, questions remain on how best to standardize the growth procedure. The possible correlation of procedures between different CVD setups is an example. Here, two thermal CVD reactors were explored to grow graphene on Cu foil. The design of these setups was entirely distinct, one being a “showerhead” cold-wall type, whereas the other represented the popular “tubular” hot-wall type. Upon standardizing the Cu foil surface, it was possible to develop a procedure for cm2-scale SLG growth that differed only by the carrier gas flow rate used in the two reactors.  相似文献   
2.
3.
Confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.  相似文献   
4.
Anilinepropylsilica xerogel was obtained by using an appropriate organosilane and tetraethyl orthosilicate as precursor reagents. The gelation was carried out using HF and NaF as catalysts. The presence of Na+ (when NaF was used) resulted in a decrease in the final organic content of the materials. This effect was interpreted as an inhibition of the organosilane polycondensation possibly due to the Na+ interaction with the SiO- groups of the hydrolyzed organosilane. The presence of Na+ also results in morphological changes in the xerogels.  相似文献   
5.
We present an O(min(Kn,n2)) algorithm to solve the maximum integral multiflow and minimum multicut problems in rooted trees, where K is the number of commodities and n is the number of vertices. These problems are NP-hard in undirected trees but polynomial in directed trees. In the algorithm we propose, we first use a greedy procedure to build the multiflow then we use duality properties to obtain the multicut and prove the optimality.  相似文献   
6.
We have used time-differential perturbed angular correlation (PAC) spectroscopy with 181Ta-probes to study the electric field gradient at Zr-sites in synthetic zircon and hafnon between room temperature and 1,200°C. PAC spectra are similar to those obtained from naturally occurring zircons. In particular, a change in slope of the quadrupole coupling vs. temperature is observed in the synthetic zircon at the same temperature as seen in natural zircons from the Mud Tank carbonatite (Australia). The synthetic hafnon data also shows this feature but at somewhat higher temperature. Low-temperature PAC spectra of both synthetic zircon and hafnon have a clearly reduced anisotropy. We believe that the cause for this is a electronic defect, possibly created during the β-decay of the probe parent nucleus.  相似文献   
7.
Information is presented on structure, composition, and response to enzymes of corn stover related to barriers for bioconversion to ethanol. Aromatic compounds occurred in most tissue cell walls. Ferulic acid esterase treatment before cellulase treatment significantly improved dry weight loss and release of phenolic acids and sugars in most fractions over cellulase alone. Leaf fractions were considerably higher in dry weight loss and released sugars with esterase treatment, but stem pith cells gave up the most phenolic acids. Results help identify plant fractions more appropriate for coproducts and bioconversion and those more suitable as residues for soil erosion control.  相似文献   
8.
9.
Given a rectangular array whose entries represent the pixels of a digitalized image, we consider the problem of reconstructing an image from the number of occurrences of each color in every column and in every row. The complexity of this problem is still open when there are just three colors in the image. We study some special cases where the number of occurrences of each color is limited to small values. Formulations in terms of edge coloring in graphs and as timetabling problems are used; complexity results are derived from the model.  相似文献   
10.
The immobilization of catalase on grafted membranes of poly(ethylene)-g-co-acrylic acid and poly(tetrafluoroethylene)-g-co-acrylic acid and their application in hydrogen peroxide electrochemical sensors is described. The introduction of carboxylic acid groups onto a hydrophobic support provides a good environment for subsequent enzyme immobilization. This single membrane, hydrogen peroxide sensor showed significant improvement with respect to the double membrane versions. The response is very rapid, the linear range being from 10 μM up to 6 mM, with a detection limit of 4.7 μM, and a lifetime of more than 4 months.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号