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1.
Yu.A. Danilov V.P. Lesnikov Yu.N. Nozdrin V.V. Podolskii M.V. Sapozhnikov O.V. Vikhrova B.N. Zvonkov 《Journal of magnetism and magnetic materials》2006
The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements. 相似文献
2.
E. S. Demidov V. V. Podol’skii V. P. Lesnikov Yu. A. Danilov M. V. Sapozhnikov A. I. Suchkov D. M. Druzhnov 《Bulletin of the Russian Academy of Sciences: Physics》2007,71(11):1578-1580
The electric, magnetic, and magneto-optical properties of thin (50–100 nm) GaSb:Mn, InSb:Mn, InAs:Mn, Ge:Mn, Ge:Fe, Si:Mn, and Si:Fe layers with a Curie point up to 500 K, obtained by laser plasma deposition in vacuum in the case of strong supersaturation of a solid solution with a 3d impurity, have been experimentally investigated. 相似文献
3.
All-Union Scientific Research Institute of Nondestructive Testing, Kishinev. Odessa Polytechnical Institute. Translated from Prikladnaya Mekhanika, Vol. 26, No. 1, pp. 77–82, January, 1990. 相似文献
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S. N. Nikolaev B. A. Aronzon V. V. Ryl’kov V. V. Tugushev E. S. Demidov S. A. Levchuk V. P. Lesnikov V. V. Podol’skii R. R. Gareev 《JETP Letters》2009,89(12):603-608
The transport and magnetic properties of Mn x Si1 ? x films with a high (x ≈ 0.35) content of Mn produced by laser deposition at growth temperatures of 300–350°C have been studied in a temperature range of 5–300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50–200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to ≈230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi2 ? x (x ≈ 0.3) type ferromagnet with delocalized spin density. 相似文献
6.
K. Moiseev M. Mikhailova V. Lesnikov V. Podolskii Yu. Kudriavtsev O. Koudriavtseva A. Escobosa 《Journal of magnetism and magnetic materials》2012
Nanotechnology of obtainment of diluted magnetic semiconductors based on the GaInAsSb compounds is developed using the pulsed laser ablation deposition of Mn atoms on the surface of the epitaxial layer of a quaternary alloy obtained by liquid phase epitaxy. Fabricated heterostructures were studied using high-resolution X-ray diffraction for the Bragg and grazing diffraction geometries, and the depth profiling analysis was performed by secondary ion mass spectrometry. It was established that the nanoscale region of the Ga0.96In0.04As0.11Sb0.89 epilayer near the deposition surface of atomic Mn exhibits the presence of a quinary compound with Mn atoms in the lattice of the solid solution layer. 相似文献
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E. S. Demidov V. V. Podol’skii V. P. Lesnikov S. A. Levchuk S. N. Gusev V. V. Karzanov D. O. Filatov 《JETP Letters》2009,90(12):754-757
Ferromagnetic resonance (FMR) with an anomalous angular dependence has been observed in the Ge:(Mn, Al)/GaAs nanolayers deposited
from laser plasma at a reduced temperature of 150°C. The resonance is associated with the needle-like inclusions of a high-temperature
ferromagnetic phase with the Curie temperature T
C > 293 K. Such a magnetic anisotropy is confirmed by the atomicforce and magneticforce microscopy of a side chip. A low-temperature
ferromagnetic phase with normal FMR and T
C < 212 K is formed between the needle-like inclusions. This phase manifests itself in the anomalous Hall effect at 77 K and
probably is a solid solution of manganese in germanium. 相似文献
8.
E. S. Demidov S. Yu. Zubkov V. P. Lesnikov G. A. Maksimov D. E. Nikolichev V. V. Podol’skii 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2008,2(4):541-545
Thin (~60 nm) germanium layers supersaturated with a manganese impurity of 10–16 at % have been studied by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The layers have been fabricated by pulsed laser deposition onto a semi-insulating single-crystal GaAs substrate. The results of XPS analysis of the Ge:Mn layers reveal a change in the line shape of germanium and manganese (2p) in the surface region compared to deeper layers, which indicates a transition from the oxidized form of the base material (Ge2+ and Ge1+) and impurity (Mn2+) near the surface to the unoxidized state of germanium (Ge 0) and manganese (Mn0) in the interior of the layer. The XPS spectra of the valence electrons of the Ge:Mn structure indicate that the density of states in the valence band of the ferromagnetic Ge:Mn structures is caused not only by mechanical mixing of germanium and manganese. The composition of heterogeneous inclusions in Ge:Mn films has been studied using scanning Auger microscopy. 相似文献
9.
E. S. Demidov S. N. Gusev V. V. Podol’skii V. P. Lesnikov V. V. Sdobnyakov L. I. Budarin A. A. Tronov E. V. Skopin 《Physics of the Solid State》2013,55(7):1407-1411
The electron transport properties of nanosized CoSi alloy layers deposited at a lowered temperature (350°C) from laser plasma onto single-crystalline gallium arsenide have been studied. An asymmetry of the current-voltage characteristic (CVC) in the longitudinal current transport in such layers has been found, which indicates the spin polarization of charge carriers, and a substantial (up to 18%) nonlinearity and a hysteresis (up to 4%) have been revealed both at room temperature and at 77 K for comparatively low current densities (up to 5 × 104 A/cm2). In repeated cycles of CVC measurements at 77 K, irreversible changes in the properties of the layers have been observed. 相似文献
10.
E. S. Demidov V. V. Sdobnyakov G. V. Vazenmiller Yu. I. Chigirinskii Yu. A. Dudin V. P. Lesnikov V. N. Trushin M. S. Boldin O. A. Belkin A. A. Bobrov N. V. Sakharov 《Technical Physics》2018,63(7):1002-1005
The paper presents a method for manufacturing mechanically strong sputtering composite targets containing the phase of the Co2FeSi or Co2MnSi Heusler alloy of the stoichiometric composition, which can be used for fabrication of spin electronic devices by high-frequency magnetron deposition and pulsed laser deposition of thin films. 相似文献