XPS study of residual oxide layers on p-GaAs surfaces

The total thickness and composition of a residual oxide layer after chemical etching of p-GaAs:Zn + In has been studied by X-ray photoelectron spectroscopy (XPS). The variation of the Ga to As oxides ratio along the depth has been determined. A concentration correlation of doping isovalent impurity and the dislocation density with the composition of residual oxides is looked for. The total thickness of the residual oxide layer on p- and semi-insulating GaAs is about 5–6 Å. It is found that the Ga₂O₃ quantity in the oxide bulk is greater than the same value of As₂O₃ in highly In-doped samples. In-doping in concentrations over 1.5 × 10¹⁹ cm⁻³ increases the Ga₂O₃ content and the density of the residual oxide. This influence is determined by reducing the dislocation density and changing the point defect environment. The presence of As-rich precipitates on the dislocations and in the matrix decreases the sputtering time and changes the composition of the residual oxide. The correlation between the type of high temperature dislocations revealed by Abrahams-Buiocchi (AB) etching and the oxide layer composition is shown. The results obtained could be used in the first stages of epitaxial growth, metallization and other technological processes of semiconductor device and ICs fabrication.     

Electrostatic interaction between two conducting spheres

In the paper we consider the problem of the electrostatic interaction between two charged conducting spheres with arbitrary electrical charges and radiuses. Using the image charges method we determine exact analytical formulas for the force F and for the potential energy W of the interaction between these two spheres as well as for the potential V of the electromagnetic field in an arbitrary point created by them. Our formulas lead to Coulomb’s law for point charges.We theoretically prove the experimentally shown fact that two spheres with the same type (positive or negative) of charges can also attract each other.     

Magnetic moments of hindered rotators by off‐center impurity ions

Off‐center impurity ions in solids often perform rotations around their regular lattice sites. Unlike quasifree rotors with rotational line spectra subject to textbook attention in quantum mechanics, the off‐center species are hindered rotors with spectra quantized in rotational bands. These bands occur because of tunneling through barriers arising along the orbital path. For an off‐center ion rotating along a planar orbit, such as the Li⁺ impurity nearest‐neighboring an F center in alkali halide, the hindered rotation will give rise to specific magnetic moments that couple to and quantize external magnetic fields normal to the orbital plane. We present a simple theory and estimates of Li⁺ magnetic dipoles and rotational bands to find conditions for an experimental verification. © 2002 Wiley Periodicals, Inc. Int J Quantum Chem, 2002     

Formation of polyelectrolyte multilayer architectures with embedded DMPC studied in situ by neutron reflectometry

The coupling of lipid molecules to polymer components in a planar biomimetic model membrane made of a lipid bilayer (dimyristoylphosphatidylcholine) supported by polyelectrolyte multilayers is studied. The polyelectrolyte support was prepared by layer-by-layer deposition of positively charged poly(allylamine hydrochloride) (PAH) and negatively charged poly(sodium 4-styrenesulfonate) (PSS). Two polymer sample terminations were considered: positively charged (PAH-terminated) and negatively charged (PSS-terminated). Neutron reflectometry studies showed that, whereas positively charged samples did not favor the deposition of lipid, negatively charged samples allowed the deposition of a lipid bilayer with a thickness of approximately 5 nm. In the latter case, formation of polyelectrolyte layers after the deposition of the lipid layer was also possible.