Magnetism in electron-doped copper oxides

We report muon spin relaxation/rotation measurements on sintered powder samples of Nd_2−x Ce _x CuO_4−y and a large single crystal of Nd₂CuO_4−y . We find an electronic phase diagram which is quite similar to that of hole-doped superconductors such as La_2−x Sr _x CuO_4−y , although the doping of electrons into the system is less efficient in destroying the static moments on the copper spins. Static magnetic order in Nd₂CuO_4−y appears below about 250 K, and two spin reorientations are seen atT=75 K andT=35 K. Measurements of the magnetic field penetration depth have been unsuccessful due to the rare-earth paramagnetism of these materials.     

μSR studies of heavy fermion systems

We have performed both zero field and high transverse field measurements at dilution refrigerator temperatures on a number of heavy electron systems, examining the superconducting and magnetic properties of these interesting materials. Among the materials studied to date are UBe₁₃, URu₂Si₂ and U₆Fe. The magnetic field penetration depth in the superconducting state of UBe₁₃ is greater than 10000 Å, as no increase in the transverse field relaxation rate is observed belowT _c . A sharp increase in the precession frequency is seen, starting atT _c . This frequency shift shows little temperature dependence at low temperature; we found no clear evidence for unconventional superconductivity in this material. Zero field measurements in URu₂Si₂ show the weak antiferromagnetic transition at 17.5 K. Finally, we we found no clear evidence for unconventional superconductivity in this material. Zero field measurements in URu₂Si₂ show the weak antiferromagnetic transition at 17.5 K. Finally, we have observed relaxation in high transverse field due to the formation of a flux lattice in U₆Fe, a material where the electron effective mass is rather lighter than in other heavy fermion systems. The relaxation exhibits a sharp onset atT _c=3.9 K, and is flat at low temperatures as expected for a conventional superconductor.     

Quantum diffusion of muonium in GaAs

The diffusion rate of muonium in the III–V compound semiconductor GaAs has been determined from measurements of muon spinT ₁ relaxation induced by motion in the presence of nuclear hyperfine interactions. It is shown for the first time in a semiconductor that (a) there is a crossover of the transport mechanism at about 90 K from stochastic to zero-phonon hopping, as evidenced by a steep rise in the hop rate at lower temperatures, and that (b) the muonium diffuses at the hop rate of 10¹⁰ s⁻¹ (corresponding diffusion constantD≈10⁻⁶ cm²s⁻¹) at lower temperatures as well as at room temperature.     

Temperature dependence of the magnetic penetration depth in YBa2Cu3O6.95

We report precision transverse fieldSR measurements of the internal field distribution in the vortex state of crystalline YBa₂Cu₃O_6.95. A novel low background apparatus was used to study a mosaic sample of three high quality single crystals (T_c=93.3K). The observed frequency spectra in magnetic fields of 5kG and 15 kG applied along the c-axis have the characteristic features expected for a regular vortex lattice with some additional broadening. From a preliminary analysis we find that [(0)/(T)]² has a linear temperature coefficient forT<30 K. Such a term is inconsistent with simple s-wave pairing in the superconducting state. These results support recent microwave measurements of(T) on similar crystals in zero applied field but differ significantly from previousSR reports on sintered powders and crystals with lower T_c.This research was supported by the Natural Sciences and Engineering Research Council of Canada.     

Magnetic-field effects on the size of vortices below the surface of NbSe2 detected using low energy beta-NMR

A low energy radioactive beam of polarized 8Li has been used to observe the vortex lattice near the surface of superconducting NbSe2. The inhomogeneous magnetic-field distribution associated with the vortex lattice was measured using depth-resolved beta-detected NMR. Below Tc, one observes the characteristic line shape for a triangular vortex lattice which depends on the magnetic penetration depth and vortex core radius. The size of the vortex core varies strongly with the magnetic field. In particular, in a low field of 10.8 mT, the core radius is much larger than the coherence length. The possible origin of these giant vortices is discussed.     

Evidence for static magnetism in the vortex cores of ortho-II YBa2Cu3O6.50

Evidence for static alternating magnetic fields in the vortex cores of underdoped YBa2Cu3O6+x is reported. Muon spin rotation measurements of the internal magnetic field distribution of the vortex state of YBa2Cu3O6.50 in applied fields of H = 1 T and H = 4 T reveal a feature in the high-field tail of the field distribution which is not present in optimally doped YBa2Cu3O6.95 and which fits well to a model with static magnetic fields in the vortex cores. The magnitude of the fields is estimated to be 18(2) G and decreases above T = 10 K. We discuss possible origins of the additional vortex core magnetism within the context of existing theories.     

Local structure of isolated positively charged muonium as an analog for the hydrogen ion in p-type GaAs

We determine the local structure of isolated positively charged muonium (Mu+) in heavily doped p-type GaAs based on muon level crossing resonance and zero applied field muon spin depolarization data. These measurements provide the first direct experimental confirmation that Mu+, and by analogy H+, is located within a stretched Ga-As bond. The distances between Mu+ and the nearest neighbor Ga and As atoms are estimated to be 1.83 +/- 0.10 A; and 1.76 +/- 0.10 A, respectively. These results are compared to existing theoretical calculations on the structure of hydrogen in GaAs and additionally provide data on the induced electric field gradients.     

Novel behavior of bond-centered muonium in heavily doped n-type silicon: Curie-like spin susceptibility and charge screening

Bond-centered muonium ( Mu(0)(BC)) has been observed in very heavily doped n-type Si:P. It exhibits a Curie-like electronic spin susceptibility which leads to a giant negative shift in the muon spin precession frequency. At high dopant levels, the Mu(0)(BC) hyperfine parameters, deduced from a model involving spin exchange with free carriers, are significantly reduced from those in intrinsic Si. This indicates that the spin density distribution for Mu(0)(BC) in metallic Si:P is altered significantly by charge screening effects, likely a general phenomenon for deep impurities in materials with high carrier concentrations.