Magnetism in electron-doped copper oxides

We report muon spin relaxation/rotation measurements on sintered powder samples of Nd_2−x Ce _x CuO_4−y and a large single crystal of Nd₂CuO_4−y . We find an electronic phase diagram which is quite similar to that of hole-doped superconductors such as La_2−x Sr _x CuO_4−y , although the doping of electrons into the system is less efficient in destroying the static moments on the copper spins. Static magnetic order in Nd₂CuO_4−y appears below about 250 K, and two spin reorientations are seen atT=75 K andT=35 K. Measurements of the magnetic field penetration depth have been unsuccessful due to the rare-earth paramagnetism of these materials.     

μSR studies of heavy fermion systems

We have performed both zero field and high transverse field measurements at dilution refrigerator temperatures on a number of heavy electron systems, examining the superconducting and magnetic properties of these interesting materials. Among the materials studied to date are UBe₁₃, URu₂Si₂ and U₆Fe. The magnetic field penetration depth in the superconducting state of UBe₁₃ is greater than 10000 Å, as no increase in the transverse field relaxation rate is observed belowT _c . A sharp increase in the precession frequency is seen, starting atT _c . This frequency shift shows little temperature dependence at low temperature; we found no clear evidence for unconventional superconductivity in this material. Zero field measurements in URu₂Si₂ show the weak antiferromagnetic transition at 17.5 K. Finally, we we found no clear evidence for unconventional superconductivity in this material. Zero field measurements in URu₂Si₂ show the weak antiferromagnetic transition at 17.5 K. Finally, we have observed relaxation in high transverse field due to the formation of a flux lattice in U₆Fe, a material where the electron effective mass is rather lighter than in other heavy fermion systems. The relaxation exhibits a sharp onset atT _c=3.9 K, and is flat at low temperatures as expected for a conventional superconductor.     

Quantum diffusion of muonium in GaAs

The diffusion rate of muonium in the III–V compound semiconductor GaAs has been determined from measurements of muon spinT ₁ relaxation induced by motion in the presence of nuclear hyperfine interactions. It is shown for the first time in a semiconductor that (a) there is a crossover of the transport mechanism at about 90 K from stochastic to zero-phonon hopping, as evidenced by a steep rise in the hop rate at lower temperatures, and that (b) the muonium diffuses at the hop rate of 10¹⁰ s⁻¹ (corresponding diffusion constantD≈10⁻⁶ cm²s⁻¹) at lower temperatures as well as at room temperature.     

Relaxed excited states and anomalous hyperfine structure of muonium centers in KBr

We report on the luminescence induced by positive muons implanted (with 4 MeV) into KBr crystal, which evidences a long-lived (lifetime=13.3 s excited state produced by muon radiolysis. The temperature dependence of the luminescence yield has a strong correlation with the amplitude of an anomalous muonium center: both are observed only below 50 K. This correlation strongly suggests that the muonium center is perturbed by the muon-induced excitons to cause the anomalous hyperfine structure. Moreover, the luminescence energy and decay time indicate that the observed luminescence is not associated with the intrinsic or impurity-related self-trapped excitons, but with a relaxed excited state specific to the muon(ium)-KBr system.     

Critical behavior of electric field gradient in MnSi studied by muon level-crossing resonance

The electric quadrupole interaction of⁵⁵Mn nuclei was studied in the weakly ferromagnetic system MnSi using muon level-crossing resonance (LCR) technique. The temperature dependence of the electric field gradient (EFG) shows a critical behavior near the ferromagnetic transition temperature, indicating that the EFG due to the conduction electron is strongly correlated with the magnetic susceptibility in the itinerant electron magnetism. The temperature dependence of EFG is in reasonable agreement with the self-consistent renormalization theory developed by Moriya and coworkers.We gratefully acknowledge helpful discussion with Dr. N. Nishida. We also wish to thank Keith Hoyle and Curtis Ballard for technical support.     

Sputtering angle effects by Kr mixing in N+ ion beam on the lifetime of nitrided carbon stripper foils

Nitrided carbon stripper (NCS) foils with high nitrogen content were produced by ion beam sputtering of reactive nitrogen gas. Such foils seem to be very useful as strippers in high-intensity heavy ion accelerators. We have conducted comprehensive research, development, and production of such foils with high reproducibility. Krypton, a heavy noble gas, was mixed with the reaction nitrogen gas (IBSRN) in the ion beam sputtering process to produce stripper foils with short sputtering deposition time and long lifetimes in the high intensity ion beam irradiation. With the (N₂ + Kr) mixed gas ions we investigated the influence of different sputtering angles (α) on the lifetime of the NCS-foils in case of poly-graphite material. The lifetime measurement of these foils of 20 ± 5 μg/cm² was performed with a 3.2 MeV Ne⁺ ion beam as usual. The foils made at a sputtering angle of 15° showed a maximum of 11.0 and 7.5  C/cm² average charge density, respectively, which corresponded to about 275 and 187 times the lifetime of the best commercially available foils.     

Muon spin relaxation studies of magnetic-field-induced effects in high-Tc superconductors

Muon spin relaxation measurements in high transverse magnetic fields [FORMULA: SEE TEXT] revealed strong field-induced quasistatic magnetism in the underdoped and Eu-doped (La,Sr)2CuO4 and La1.875Ba0.125CuO4, existing well above Tc and TN. The susceptibility counterpart of Cu spin polarization, derived from the muon spin relaxation rate, exhibits a divergent behavior towards T approximately 25 K. No field-induced magnetism was detected in overdoped La1.81Sr0.19CuO4, optimally doped Bi2212, and Zn-doped YBa2Cu3O7.