有机化学教学中的“三融合、二反思、四进阶”创新教学模式*

为培养出新时代创新人才,构建的“三融合、二反思、四进阶”教学模式有效提升了学生们科技创新能力。依据有机化学特点,创设科学发现情境,通过核心知识点网融合(挑战度)、理论实践交叉融合(高阶性)和化学思政融合(课程思政)“三融合”策略,不断激发学生们学习兴趣;通过教师反思、学生反思的“二反思”过程不断优化教学过程,改善教学效果;最终使具有不同知识层次的学生通过“四进阶”教学策略逐步提升科创能力(创新性)。     

微波消解-电感耦合等离子体-质谱法测定大米中的铅、镉、汞和砷

应用微波消解-电感耦合等离子体-质谱法(ICP-MS)一次进样同时测定大米中的铅、镉、汞、砷含量.采用8mL硝酸+2mL过氧化氢的微波消解体系,消解后无需赶酸,定容后直接用ICP-MS测定.实验发现,运用该方法干扰少,速度快,多元素同时分析,重现性好,准确度高.该方法的回收率分别为:Pb:100.9％、Cd:90.1％、Hg:86.1％、As:92.8％.Pb、Cd、Hg、As方法检出限均为0.001ng/mL.     

六方AlN本征缺陷的第一性原理研究

用基于密度泛函理论平面波赝势法首先对六方AlN本征点缺陷(氮空位、铝空位、氮替代铝、铝替代氮、氮间隙、铝间隙)存在时的晶格结构进行优化，得到其稳定结构；然后通过各缺陷形成能的计算可得知其在生长过程中形成的难易程度；最后从态密度的角度对各种本征点缺陷引起的缺陷能级及电子占据情况进行了分析.发现除氮空位外其他本征缺陷在带隙中形成的能级都很深，要得到n型或p型AlN必须要引入外来杂质.计算得到的本征缺陷能级对于分析AlN的一些非带边辐射机理有重要帮助. 关键词： 六方AlN 形成能 缺陷能级 态密度     

Growth of AlGaN Epitaxial Film with Chemical Vapour High A1 Content by Metalorganic Deposition

A high-Al-content AlGaN epilayer is grown on a low-temperature-deposited AlN buffer on （0001） sapphire by low pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity, and twisted mosaicity on the conditions of the AlGaN epilayer deposition is evaluated. An AlGaN epilayer with favourable surface morphology and crystal quality is deposited on a 2Onto low-temperature-deposited AlN buffer at a low V/Ⅲ flow ratio of 783 and at a low reactor pressure of 100 Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.     

Tunable optical limiting of gold nanorod thin films

Permalloy (Py) films were deposited on Si(111) or Corning 0211 glass substrates. There were two deposition temperatures: T _s=room temperature (RT) and T _s=270°C. The film thickness (t _f) ranges from 10 to 130 nm. The crystal structure properties of the films were studied by X-ray diffraction and transmission electron microscopy. Mechanical properties (including Young’s modulus E _f and hardness H _f) of each film were measured by the nanoindentation (NI) technique. E _f of the Py/Si(111) films was checked again by the laser induced surface acoustic wave (LA-SAW) technique. It was found that the NI technique is best suited for the measurements of E _f and H _f, but only when the sample belongs to the (soft film)/(soft substrate) system, such as the Py/glass film. For the (soft film)/(hard substrate) system, such as the Py/Si(111) film, the NI technique often provides higher values of E _f and H _f than expected. The anomalous phenomenon, associated with the NI technique may be related to the anisotropic crystal structures in the Py films on different kinds of substrates. From this study, we conclude that [E _f of Py/Si(111)]>[E _f of Py/glass] and [H _f of Py/Si(111)]>[H _f of Py/glass]. The good mechanical properties of the Py/Si(111) film make it a better candidate for recording head applications.     

电场条件下氧化锌结晶特性及极化产物的拉曼光谱分析

开展高压电场调控纳米材料结构形貌和性能研究在功能材料领域具有重要的理论和实际意义.本文在高压电场条件下合成了氧化锌纳米粉体,并对粉末试片进行了后期电场极化处理,研究了电场对氧化锌的结构形貌、点缺陷、拉曼光谱的影响.以X射线衍射仪(XRD)、扫描电镜(SEM)和拉曼光谱仪对产物的结构形貌、拉曼位移、缺陷分布等进行了表征.结果表明,高压电场条件下氧化锌的完全晶化时间和温度比未施加电场时明显延长和升高,直流电场能够显著促进前驱物中氧化锌的形核,并降低晶化速度.不同电场强度下氧化锌具有不同的显微形貌.纳米氧化锌粉末试片在直流电场中极化后,其阴极面和阳极面的拉曼光谱表现出明显的差异.有明显漏电电流的情况下,阳极面在1050 cm~(–1)处的二级光学声子模A_1(LO)的强度显著提高,且拉曼强度I_1=438 cm~(–1)和I_2=1050 cm~(–1)的比值与极化电场的场强呈线性关系.当调转试片正反面进行二次极化时,原来在阳极面尖锐的1050 cm~(–1)峰经过阴极极化而消失.阳极面1050 cm~(–1)拉曼峰的锐化与氧化锌晶粒内的缺陷重新分布和双肖脱基势垒有关.     

Synthesis of gold nanostars with fractal structure: application in surface-enhanced Raman scattering

Multi-branched gold nanostars with fractal feature were synthesized using the Triton X-100 participant seed-growth method. By increasing the amount of ascorbic acid, the branch length of gold nanostars could be greatly increased. It has been interesting to find that the secondary growth of new branches takes place from the elementary structure when the aspect ratio of the branches is greater than 8.0 and the corresponding plasmon absorption wavelength is greater than 900 nm. Raman activity of the gold nanostar films has been investigated by using the 4-mercaptobenzoic acid (4-MBA) as Raman active probe. Experimental results show that the surface-enhanced Raman scattering (SERS) ability of the gold nanostars could be efficiently improved when the fractal structure appears. The physical mechanism has been attributed to the intense increased secondary branch number and the increased “hot spots”. These unique multi-branched gold nanostars with fractal feature and great SERS activity should have great potential in sensing applications.     

GaAs/Si外延层X射线双晶衍射摇摆曲线的动力学模拟和位错密度的测量

利用X射线衍射动力学理论和位错的小角晶界模型,分析了GaAs/Si外延层中位错对X射线双晶衍射摇摆曲线的影响,认为GaAs/Si外延层并不是严格取向一致的完整单晶膜,而是存在着许多小角晶界的镶嵌晶体,并推导出了其中镶嵌块的晶向分布函数和晶格应变分布函数,模拟出了GaAs/Si外延层X射线双晶衍射摇摆曲线,由此曲线计算出了GaAs/Si外延层中的位错密度.同时还得到了Si衬底上GaAs外延层中镶嵌块的大小.为分析高失配外延材料的双晶衍射摇摆曲线提供了新的方法.     

器件参数对GaN基n~+-GaN/i-Al_x Ga_(1-x)N/n~+-GaN结构紫外和红外双色探测器中紫外响应的影响

研究了AlGaN层参数对GaN基n+-GaN/i-AlxGa1-xN/n+-GaN结构紫外和红外双色探测器中紫外响应的影响规律及物理机制.模拟计算发现:降低AlGaN层本底载流子浓度会增加器件的量子效率,当本底载流子浓度不能进一步降低时,可以通过减小AlGaN层的厚度以保证器件的量子效率.在材料生长和器件工艺过程中都应减少界面态.外加较小的反向偏压能大幅度提高紫外量子效率,分析表明,GaN/AlGaN/GaN形成的两个背靠背、方向相反的异质结电场是出现这些现象的根本原因.在实际器件设计中,应该根据需要调节各结构参数,以保证器件的量子效率.     

A plasmonic and SERS dual-mode iodide ions detecting probe based on the etching of Ag-coated tetrapod gold nanostars

Journal of Nanoparticle Research - Multiwalled carbon nanotubes (MWCNTs) were grafted with poly(AMPS–co–AM) by free-radical polymerization of acrylamide (AM) and...