Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot

We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the applied field is shown experimentally to increase the attractive Coulomb interaction leading to a change in the sign of the biexcitonic binding energy.     

Stability and convergence of the spectral Lagrange-Galerkin method for mixed periodic/non-periodic convection-dominated diffusion problems

We present a convergence analysis of the spectral Lagrange-Galerkinmethod for mixed periodic/non-periodic convection-diffusionproblems. The scheme is unconditionally stable, independentof the diffusion coefficient, even in the case when numericalquadrature is used. The theoretical predictions are illustratedby a series of numerical experiments. For the periodic case,our results present a significant improvement on those givenby Süli & Ware (1991) SIAM J. Numer.Anal.28, 423-445).     

Models for capacitated lot-sizing problem with backlogging,setup carryover and crossover

Setup operations are significant in some production environments. It is mandatory that their production plans consider some features, as setup state conservation across periods through setup carryover and crossover. The modelling of setup crossover allows more flexible decisions and is essential for problems with long setup times. This paper proposes two models for the capacitated lot-sizing problem with backlogging and setup carryover and crossover. The first is in line with other models from the literature, whereas the second considers a disaggregated setup variable, which tracks the starting and completion times of the setup operation. This innovative approach permits a more compact formulation. Computational results show that the proposed models have outperformed other state-of-the-art formulation.     

Dynamics of single InGaN quantum dots

Decay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the 2D wetting layer. The lifetimes of single dots in the temperature range 4–60 K decrease with increasing temperature. Different dots show similar lifetimes of 2 ns.     

Two-photon absorption from single InGaN/GaN quantum dots

We present a study of the time-integrated and time-resolved photoluminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study.     

Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach

Ohmic and rectifying metal contacts to semiconductor nanowires are integral to electronic device structures and typically require different metals and different process techniques to form. Here we show how a noble metal ion beam of Pt commonly used to pattern conducting contacts in electron microscopes can form both ohmic and Schottky/blocking contacts on ZnO nanowires by controlling native point defects at the intimate metal‐semiconductor interface. Spatially‐resolved cathodoluminescence spectroscopy on a nanoscale both laterally and in depth gauges the nature, density, and spatial distribution of specific native point defects inside the nanowires and at their metal interfaces. Combinations of electron and ion beam deposition, annealing, and sculpting of the same nanowire provide either low contact resistivity ohmic contacts or a high Schottky/blocking barrier with a single metal source. These results highlight the importance of native point defects distributed inside nanowires and their variation near interfaces with sculpting and annealing.