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Analysis of silicon light emission under breakdown condition using an indirect intraband model 总被引:1,自引:0,他引:1
The light emission from silicon (npn) emitter–base junctions under breakdown condition has been modelled. The model suggests an indirect intraband processes combined with self-absorption. Good agreement between simulated and measured electroluminescence (EL) spectra is shown which demonstrates that the model is simple and more consistent with fundamental physical device characteristics particularly in the spectral range studied (1.4–2 eV). 相似文献
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Exciton Stability and Luminescence in InN/(In,Ga)N Quantum Dots Under Size and Shell Content Effects
Benhaddou Farid El Ghazi Haddou Abboudi Hassan Zorkani Izeddine Jorio Anouar 《International Journal of Theoretical Physics》2021,60(10):3982-3992
International Journal of Theoretical Physics - The electronic structure and associated excitonic properties of core/shell nanocrystals based on InN/(In,Ga)N quantum dots with InN-core and... 相似文献
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Haddou EL Ghazi Anouar Jorio Izeddine Zorkani Mohamed Ouazzani-Jamil 《Optics Communications》2008,281(12):3314-3319
Electroluminescence (EL) properties of InxGa1−xN/AlyGa1−yN/GaN/SiC diode were studied. The spectral range for which EL spectra were recorded is 1–3.5 eV. Room temperature EL was obtained for forward bias (3.18 V, 220 μA) at 446.067 nm (blue luminescence band), 606.98 nm (yellow luminescence band) and 893.84 nm (Infrared luminescence band). The EL temperature dependence shows that, BL band is mostly given by e–h recombination corresponding to indium composition equal to 0.17 ± 0.01 and 0.14 ± 0.02 obtained theoretically and experimentally, respectively. The yellow band is generally weak and absent at low temperature. The IRL band is more consistent with the DAP recombination and could be explained by the thermal activation of Mg states. The luminescence bands shift to lower energies is due probably to the larger potential fluctuations effect. 相似文献
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