Structure and properties of Co-Ni-Fe coatings deposited electrolytically in the X-Ray irradiation

The main processes governing the formation of Co-Ni-Fe alloys electrolytically deposited in the X-ray irradiation have been discussed. It has been found that the electrical and magnetic properties depend on the deposition and irradiation regimes. The factors responsible for the variation in the electrical resistivity and specific magnetization of the films prepared by electrolytic deposition, which are caused by variations in the surface morphology, elemental composition, decrease in the porosity, and increase in the electrolytical deposition rate under X-ray irradiation, have been considered.     

X-ray diffraction study of the crystallographic characteristics of TlInS x Se2 − x solid solutions

Crystallographic parameters of TlInS _x Se_{2 ? x} solid solutions have been measured by X-ray diffraction. Dependences of the unit-cell parameters on the composition are determined. It is established that the values of parameters a, b, and c and the angle β decrease with an increase in x. It is shown that the TlInS _x Se_{2 ? x} system includes a continuous series of solid solutions based on the TlInSe₂ compound with tetragonal symmetry at x values ≤ 0.4, while at x ≥ 0.6 solid solutions based on the TlInS₂ compound with a monoclinic structure are formed.     

Synthesis and Structural Study of the Cu2ZnSn1 – xSixSe4 System

Crystallography Reports - The quaternary semiconductor compounds Cu2ZnSnSe4, Cu2ZnSiSe4, and Cu2ZnSn1 – xSixSe4 solid solutions on their basis have been synthesized from the...     

Dielectric characteristics and phase transitions in Tl(InS2) 1 − x (FeSe2) x solid solutions

This paper reports on a study of the electrical conductivity and permittivity of Tl(InS_{2) 1−x} (FeSe_{2) x} crystals as functions of composition and temperature. It has been found that the permittivity decreases in magnitude, while the electrical conductivity increases with increasing x. Crystals Tl(InS_{2) 1−x} (FeSe_{2) x} have been observed to undergo a sequence of phase transitions characteristic of TlInS₂, which manifests itself in formation of anomalies in the σ = f(T) and ɛ = f(T) temperature dependences. It has been shown that as x increases, the phase transition temperatures decrease, while the temperature region within which the incommensurate phase persists broadens slightly.     

Effect of ionizing radiation on the dielectric characteristics of TlInSe<Subscript>2</Subscript> and TlGaTe<Subscript>2</Subscript> single crystals

The temperature dependences of the electrical conductivity and the permittivity of TlInSe₂ and TlGaTe₂ crystals unirradiated and irradiated with 4-MeV electrons at a doze of 10¹⁶ cm⁻² have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity σ and the permittivity ɛ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe₂ and TlGaTe₂ single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences σ = f(T) and ɛ = f(T). Electron irradiation at a doze of 10¹⁶ cm⁻² does not affect the phase transition temperatures of the crystals under investigation.     

Synthesis and X-ray Diffraction Studies of Cu2ZnGexSn1 – xSe4 Solid Solutions

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques - Quaternary compounds (Cu2ZnGeSe4 and Cu2ZnSnSe4) and solid solutions on their basis are prepared via single-temperature...     

Effect of ionizing radiation on dielectric characteristics of Cu<Subscript>2</Subscript>ZnSn(S<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>4</Subscript> single crystals

The effect of electron irradiation on conductivity and dielectric permeability of Cu₂ZnSnS₄ and Cu₂ZnSnSe₄ single crystals and solid solutions based on them is studied. It is shown that values of dielectric permeability decrease with an increase in the irradiation dose while those of specific electric conductivity sharply increase.     

The Influence of Electron Irradiation on the Dielectric Characteristics of Single Crystals of AgGaSe2

Physics of the Solid State - The influence of various doses of electron irradiation on the dielectric permeability and specific conductance of ternary nonlinear optical crystals of AgGaSe2 at...     

Low-temperature X-ray studies of TlInS2, TlGaS2, and TlGaSe2 single crystals

The results of X-ray diffraction studies of the unit-cell parameters and thermal-expansion coefficients of TlInS₂, TlGaS₂, and TlGaSe₂ crystals in the temperature range 100–300 K are described. It is shown that the unit-cell parameters of all the studied crystals gradually increase with increasing temperature. The temperature dependences of these parameters exhibit anomalies in the form of bends and kinks at temperatures corresponding to phase transitions in the crystals. The thermal-expansion coefficients along the [001] crystallographic direction of the crystals under study are determined. It is found that their values slightly change with increasing temperature.     

Synthesis and X-ray Diffraction Analysis of Cu2CdGexSn1 – xSe4 Solid Solutions

Crystallography Reports - The high-temperature orthorhombic phase of Cu2CdGeSe4 quaternary compound, tetragonal phase of Cu2CdSnSe4 compound, and Cu2CdGexSn1&nbsp;–&nbsp;xSe4 solid...